US3418544A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Attachment of leads to semiconductor devices
Assignee: Westinghouse Electric Corp
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Filing: 1966-07-26
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Granted: 1968-12-24
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Expires: 1986-07-26
Abstract
No abstract record available.
Inventors
- 👤 Robert W France
- 👤 Ronald P Nandor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/59
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
155 words
IN THE METHOD FOR ATTACHING ELECTRICAL LEADS TO CLOSELY-SPACED METALLIC ELECTRODE REGIONS FUSED TO A SEMICONDUCTIVE WAFER SUCH THAT EACH LEAD IS CONNECTED TO BOTH OF A PAIR OF ADJACENT METALLIC REGIONS AND BRIDGES THE GAP THEREBETWEEN; THE STEPS OF PLACING STRAIGHT WIRE MEMBERS IN HOLES PROVIDED IN A LOCATING FIXTURE, THE WIRES BEING FORMED FROM ELECTRICAL CONDUCTING MATERIAL AND HAVING LOWER HEAD PORTIONS OF SUFFICIENT AREA TO BRIDGE SAID GAP BETWEEN THE METALLIC REGIONS, LOCATING SAID SEMICONDUCTIVE WAFER SUCH THAT IT IS BENEATH SAID FIXTURE WITH THE SPACED METALLIC ELECTRODE REGIONS ON THE UPPER SURFACE OF THE WAFER, POSITIONING SAID FIXTURE OVER THE WAFER SUCH THAT SAID HOLES AND THE WIRES CARRIED THEREIN ARE DIRECTLY OVER THE GAPS BETWEEN ADJACENT METALLIC ELECTRODE REGIONS ON THE WAFER WITH THE LOWER HEAD PORTIONS ON THE WIRES BRIDGING SAID GAPS, AND HEATING THE THUS ASSEMBLED PARTS TO BRAZE THE HEAD PORTIONS TO THE SPACED METALLIC ELECTRODE REGIONS.
Claim 2
Dependent Claim
155 words
IN THE METHOD FOR ATTACHING ELECTRICAL LEADS TO CLOSELY-SPACED METALLIC ELECTRODE REGIONS FUSED TO A SEMICONDUCTIVE WAFER SUCH THAT EACH LEAD IS CONNECTED TO BOTH OF A PAIR OF ADJACENT METALLIC REGIONS AND BRIDGES THE GAP THEREBETWEEN; THE STEPS OF PLACING STRAIGHT WIRE MEMBERS IN HOLES PROVIDED IN A LOCATING FIXTURE, THE WIRES BEING FORMED FROM ELECTRICAL CONDUCTING MATERIAL AND HAVING LOWER HEAD PORTIONS OF SUFFICIENT AREA TO BRIDGE SAID GAP BETWEEN THE METALLIC REGIONS, LOCATING SAID SEMICONDUCTIVE WAFER SUCH THAT IT IS BENEATH SAID FIXTURE WITH THE SPACED METALLIC ELECTRODE REGIONS ON THE UPPER SURFACE OF THE WAFER, POSITIONING SAID FIXTURE OVER THE WAFER SUCH THAT SAID HOLES AND THE WIRES CARRIED THEREIN ARE DIRECTLY OVER THE GAPS BETWEEN ADJACENT METALLIC ELECTRODE REGIONS ON THE WAFER WITH THE LOWER HEAD PORTIONS ON THE WIRES BRIDGING SAID GAPS, AND HEATING THE THUS ASSEMBLED PARTS TO BRAZE THE HEAD PORTIONS TO THE SPACED METALLIC ELECTRODE REGIONS.
Claim 3
Dependent Claim
128 words
A SEMICONDUCTOR ASSEMBLY COMPRISING A WAFER OF SILICON HAVING FUSED TO ONE FACE THEREOF CONCENTRIC GOLD FOIL RINGS, ALTERNATE ONES OF SAID RINGS BEING DOPED WITH AN IMPURITY OF ONE CONDUCTIVITY TYPE AND THE REMAINING ALTERNATE RINGS BEING DOPED WITH AN IMPURITY OF THE OTHER CONDUCTIVITY TYPE, AND LEAD WIRES OF GENERALLY CIRCULAR CROSS SECTION HAVING ENLARGED CROSS-SECTIONAL LOWER ENDS ELECTRICALLY BONDED TO ADJACENT ONES OF SAID GOLD FOIL RINGS SUCH THAT THE ENLARGED CROSS-SECTIONAL LOWER ENDS BRIDGE THE GAPS BETWEEN SAID ADJACENT RINGS, AS IS PRODUCED BY MAINTAINING SAID LOWER ENDS OF THE WIRE IN ENGAGEMENT WITH ADJACENT RINGS AND HEATING THE ASSEMBLY TO A TEMPERATURE SLIGHTLY ABOVE THE MELTING POINT OF THE GOLDSILICON EUTECTIC COMPOSITION OF THE RINGS FORMED WHEN THEY ARE FUSED TO THE SILICON.
Claim 4
Dependent Claim
128 words
A SEMICONDUCTOR ASSEMBLY COMPRISING A WAFER OF SILICON HAVING FUSED TO ONE FACE THEREOF CONCENTRIC GOLD FOIL RINGS, ALTERNATE ONES OF SAID RINGS BEING DOPED WITH AN IMPURITY OF ONE CONDUCTIVITY TYPE AND THE REMAINING ALTERNATE RINGS BEING DOPED WITH AN IMPURITY OF THE OTHER CONDUCTIVITY TYPE, AND LEAD WIRES OF GENERALLY CIRCULAR CROSS SECTION HAVING ENLARGED CROSS-SECTIONAL LOWER ENDS ELECTRICALLY BONDED TO ADJACENT ONES OF SAID GOLD FOIL RINGS SUCH THAT THE ENLARGED CROSS-SECTIONAL LOWER ENDS BRIDGE THE GAPS BETWEEN SAID ADJACENT RINGS, AS IS PRODUCED BY MAINTAINING SAID LOWER ENDS OF THE WIRE IN ENGAGEMENT WITH ADJACENT RINGS AND HEATING THE ASSEMBLY TO A TEMPERATURE SLIGHTLY ABOVE THE MELTING POINT OF THE GOLDSILICON EUTECTIC COMPOSITION OF THE RINGS FORMED WHEN THEY ARE FUSED TO THE SILICON.
References Cited (Backward Citations)
US3210617A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-24 | 1972-06-24 | 1972-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-24 | 1976-06-24 | 1976-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-24 | 1980-06-24 | 1980-12-24 | $7700.00 | Window Closed / Lapsed |