Semiconductor device contact structure

Claim 1

A SEMICONDUCTOR DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL OF A FIRST TYPE CONDUCTIVITY HAVING FIRST AND SECOND PARALLEL MAJOR SURFACES; SAID WAFER FORMING A FIRST SEMICONDUCTOR ELEMENT; A SECOND SEMICONDUCTOR ELEMENT COMPRISING A ZONE OF A SECOND TYPE CONDUCTIVITY MATERIAL DISPOSED UPON THE FIRST MAJOR SURFACE OF SAID WAFER; A THIRD SEMICONDUCTOR ELEMENT COMPRISING A PLURALITY OF SPACED ZONES OF SECOND TYPE CONDUCTIVITY MATERIAL DISPOSED UPON THE SECOND MAJOR SURFACE OF SAID SEMICONDUCTOR WAFER; THE INTERFACES BETWEEN SAID SECOND AND FIRST ELEMENTS AND BETWEEN SAID THIRD AND FIRST ELEMENTS FORMING RECTIFYING JUNCTIONS; A MOUNTING MEMBER HAVING A SUBSTANTIALLY FLAT SURFACE THEREON; SAID WAFER OF SEMICONDUCTOR MATERIAL BEING DISPOSED UPON THE SUBSTANTIALLY FLAT SURFACE OF SAID MOUNTING MEMBER, WITH SAID SECOND ELEMENT BEING IN CONTACT THEREWITH; FIRST AND SECOND CONTACT MEMBERS EACH HAVING A PLURALITY OF SPACED PROJECTIONS THEREON; SAID FIRST AND SECOND CONTACT MEMBERS BEING DISPOSED UPON THE SECOND MAJOR SURFACE OF SAID SEMICONDUCTOR WAFER, WITH THE SPACED PROJECTIONS OF SAID FIRST CONTACT MEMBER BEING IN CONTACT WITH AT LEAST A PORTION OF THE SPACED ZONES OF SAID THIRD SEMICONDUCTOR ELEMENT, AND THE SPACED PROJECTIONS OF SAID SECOND CONTACT MEMBER BEING IN CONTACT WITH SAID FIRST SEMICONDUCTOR ELEMENT; AND MEANS APPLYING PRESSURE TO SAID FIRST AND SECOND CONTACT MEMBERS TO FORM PRESSURE BONDED JOINTS BETWEEN SAID FIRST CONTACT MEMBER AND SAID THIRD SEMICONDUCTOR ELEMENT, BETWEEN SAID SECOND CONTACT MEMBER AND SAID FIRST SEMICONDUCTOR ELEMENT, AND BETWEEN SAID MOUNTING MEMBER AND SAID SECOND SEMICONDUCTOR ELEMENT.