US3416042A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave integrated circuit mixer
Assignee: Texas Instruments Inc
•
Filing: 1964-09-18
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Granted: 1968-12-10
•
Expires: 1984-09-18
Abstract
No abstract record available.
Inventors
- 👤 Philip R Thomas
- 👤 Tom M Hyltin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:12
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/221; H03; H03D; H03D7/00; H03D7/14; H03D7/1408
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
216 words
A MIXER FOR MODULATING RADAR-FREQUENCY SIGNALS WHICH COMPRISES: (A) A SUBSTANTIALLY INSTRINSIC SEMICONDUCTOR WAFER HAVING OPPOSITE SURFACES, (B) A CONTINUOUS METALLIC LAYER ADJACENT ONE OF SAID OPPOSITE SURFACES TO PROVIDE A CONDUCTIVE GROUND PLANE LAYER, (C) A PLURALITY OF THIN METALLIC FILMS PROVIDING CONDUCTIVE STRIPLINES DEPOSITED ON THE OTHER SURFACE OF THE WAFER AND FORMING A COUPLER INCLUDING A PAIR OF INPUT PORTIONS FOR RECEIVING A PAIR OF INPUT SIGNALS AND A PAIR OF OUTPUT PORTIONS, (D) A PAIR OF SURFACE-ORIENTED DIODES IN SAID WAFER, EACH DIODE COMPRISED OF A FIRST ZONE OF ONE CONDUCTIVITY TYPE AND A SECOND ZONES BEING LATERALLY TYPE, SAID FIRST AND SECOND ZONES BEING LATERALLY SPACED FROM ONE ANOTHER ALONG AND EXTENDING SOLELY TO SAID OTHER SURFACE, A PAIR OF JUNCTIONS FORMED BY THE INTERSECTION OF EACH OF SAID ZONES WITH SAID WAFER EXTENDING SOLELY TO SAID OTHER SURFACE WITH INTRINSIC SEMICONDUCTOR MATERIAL OF SAID WAFER SEPARATING SAID PAIR OF JUNCTIONS, THE COUPLER OUTPUT PORTIONS BEING RESPECTIVELY ELECTRICALLY CONNECTED WITH THE FIRST ZONE OF EACH OF THE SAID DIODES AT SAID OTHER SURFACE, AND (E) A PAIR OF THIN METALLIC FILMS PROVIDING CONDUCTIVE STRIPLINES RESPECTIVELY ELECTRICALLY CONNECTED WITH THE SECOND ZONE OF EACH OF THE SAID DIODES AT SAID OTHER SURFACE AND FORMING A PAIR OF OUTPUT PORTIONS FOR THE MIXER.
Claim 2
Dependent Claim
216 words
A MIXER FOR MODULATING RADAR-FREQUENCY SIGNALS WHICH COMPRISES: (A) A SUBSTANTIALLY INSTRINSIC SEMICONDUCTOR WAFER HAVING OPPOSITE SURFACES, (B) A CONTINUOUS METALLIC LAYER ADJACENT ONE OF SAID OPPOSITE SURFACES TO PROVIDE A CONDUCTIVE GROUND PLANE LAYER, (C) A PLURALITY OF THIN METALLIC FILMS PROVIDING CONDUCTIVE STRIPLINES DEPOSITED ON THE OTHER SURFACE OF THE WAFER AND FORMING A COUPLER INCLUDING A PAIR OF INPUT PORTIONS FOR RECEIVING A PAIR OF INPUT SIGNALS AND A PAIR OF OUTPUT PORTIONS, (D) A PAIR OF SURFACE-ORIENTED DIODES IN SAID WAFER, EACH DIODE COMPRISED OF A FIRST ZONE OF ONE CONDUCTIVITY TYPE AND A SECOND ZONES BEING LATERALLY TYPE, SAID FIRST AND SECOND ZONES BEING LATERALLY SPACED FROM ONE ANOTHER ALONG AND EXTENDING SOLELY TO SAID OTHER SURFACE, A PAIR OF JUNCTIONS FORMED BY THE INTERSECTION OF EACH OF SAID ZONES WITH SAID WAFER EXTENDING SOLELY TO SAID OTHER SURFACE WITH INTRINSIC SEMICONDUCTOR MATERIAL OF SAID WAFER SEPARATING SAID PAIR OF JUNCTIONS, THE COUPLER OUTPUT PORTIONS BEING RESPECTIVELY ELECTRICALLY CONNECTED WITH THE FIRST ZONE OF EACH OF THE SAID DIODES AT SAID OTHER SURFACE, AND (E) A PAIR OF THIN METALLIC FILMS PROVIDING CONDUCTIVE STRIPLINES RESPECTIVELY ELECTRICALLY CONNECTED WITH THE SECOND ZONE OF EACH OF THE SAID DIODES AT SAID OTHER SURFACE AND FORMING A PAIR OF OUTPUT PORTIONS FOR THE MIXER.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-10 | 1972-06-10 | 1972-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-10 | 1976-06-10 | 1976-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-10 | 1980-06-10 | 1980-12-10 | $7700.00 | Window Closed / Lapsed |