US3410737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor nuclear particle detectors by diffusing
Assignee: Oak Ridge Technical Enterprises Corp
•
Filing: 1965-05-03
•
Granted: 1968-11-12
•
Expires: 1985-05-03
Abstract
No abstract record available.
Inventors
- 👤 Werner A Schnler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:39
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/292; H10F30/2925; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/185
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
THE METHOD OF ION DRIFTING A SEMICONDUCTOR WAFER HAVING AN N-TYPE REGION CONTAINING DIFFUSED IONIZED DONOR ATOMS AND A P-TYPE REGION TO DRIFT THE IONIZED DONOR ATOMS INTO THE P-TYPE REGION AND THEREBY FORM A COMPENSATED I-ZONE BETWEEN SAID REGIONS CHARACTERIZED BY HIGHER SPECIFIC RESISTIVITY THAN SAID REGIONS FOR USE AS A NUCLEAR PARTICLE DETECTOR, COMPRISING THE STEPS OF HEATING SAID WAFER TO MAINTAIN THE WAFER AT A TEMPERATURE OF BETWEEN ABOUT 90*C. AND 150*C., APPLYING A REVERSE BIAS TO SAID WAFER OT EFFECT DRIFTING OF THE DONOR ATOMS FROM SAID N-TYPE REGION INTO SAID P-TYPE REGION TO ESTABLISH AN I-ZONE THEREBETWEEN REDUCING THE THICKNESS OF SAID P-TYPE REGION TO A SELECTED MINIMUM THICKNESS, IRRADIATING SAID WAFER DURING
Claim 2
Independent Claim
118 words
THE METHOD OF ION DRIFTING A SEMICONDUCTOR WAFER HAVING AN N-TYPE REGION CONTAINING DIFFUSED IONIZED DONOR ATOMS AND A P-TYPE REGION TO DRIFT THE IONIZED DONOR ATOMS INTO THE P-TYPE REGION AND THEREBY FORM A COMPENSATED I-ZONE BETWEEN SAID REGIONS CHARACTERIZED BY HIGHER SPECIFIC RESISTIVITY THAN SAID REGIONS FOR USE AS A NUCLEAR PARTICLE DETECTOR, COMPRISING THE STEPS OF HEATING SAID WAFER TO MAINTAIN THE WAFER AT A TEMPERATURE OF BETWEEN ABOUT 90*C. AND 150*C., APPLYING A REVERSE BIAS TO SAID WAFER OT EFFECT DRIFTING OF THE DONOR ATOMS FROM SAID N-TYPE REGION INTO SAID P-TYPE REGION TO ESTABLISH AN I-ZONE THEREBETWEEN REDUCING THE THICKNESS OF SAID P-TYPE REGION TO A SELECTED MINIMUM THICKNESS, IRRADIATING SAID WAFER DURING
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-11-12 | 1972-05-13 | 1972-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-11-12 | 1976-05-13 | 1976-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-11-12 | 1980-05-13 | 1980-11-12 | $7700.00 | Window Closed / Lapsed |