US3407315A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor device
Assignee: US Philips Corp
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Filing: 1966-03-01
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Granted: 1968-10-22
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Expires: 1986-03-01
Abstract
No abstract record available.
Inventors
- 👤 Greefkes Johannes Anton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:38
CPC Classifications
H; H03; H03L; H03L1/00; H03F; H03F1/00; H03F1/30; H03F1/302; H03K; H03K17/00; H03K17/06; H03K17/14; H03K17/51; H03K17/56; H03K17/60; H03K3/00; H03K3/01; H03K3/011; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D84/00; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
576 words
A CIRCUIT ARRANGEMENT COMPRISING: A FIRST TRANSISTOR INCLUDING: A FIRST BODY OF SEMICONDUCTOR MATERIAL, SAID BODY HAVING A MAJOR SURFACE; A FIRST ZONE OF ONE CONDUCTIVITY TYPE EXTENDING INTO SAID BODY FROM SAID SURFACE FORMING A COLLECTOR REGION; A SECOND ZONE OF OPPOSITE CONDUCTIVITY TYPE INSET INTO SAID FIRST ZONE SAID SURFACE FORMING A BASE REGION; A FIRST P-N JUNCTION FORMED BETWEEN SAID FIRST AND SECOND ZONES, SAID P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID SECOND ZONE; A THIRD ZONE OF SAID FIRST CONDUCTIVITY TYPE INSET INTO SAID SECOND ZONE FROM SAID SURFACE FORMING AN EMITTER REGION; A SECOND P-N JUNCTION FORMED BETWEEN SAID SECOND AND THIRD ZONES, SAID SECOND P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID THIRD ZONE; FIRST COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE; EMITTER CONTACT MEANS CONTACTING SAID THIRD ZONE AT SAID SURFACE; SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS ESTABLISHING A CURRENT PATH BETWEEN SAID FIRST AND THIRD ZONES THROUGH SAID SECOND ZONE; MEANS FOR APPLYING A FIRST POTENTIAL BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; BASE CONTACTING MEANS CONTACTING SAID SECOND ZONE AT SAID SURFACE; MEANS FOR APPLYING A SECOND POTENTIAL TO SAID BASE CONTACT MEANS TO CONTROL THE CURRENT FLOW BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; SECOND COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE, SAID SECOND COLLECTOR CONTACT MEANS BEING REMOTE BOTH FROM SAID CURRENT PATH AND FROM SAID FIRST COLLECTOR CONTACT MEANS; LOAD MEANS CONNECTED TO SAID SECOND COLLECTOR CONTACT MEANS, SAID LOAD MEANS COMPRISING A SECOND TRANSISTOR; SAID SECOND TRANSISTOR INCLUDING: A BODY OF SEMICONDUCTOR MATERIAL, SAID BODY HAVING A MAJOR SURFACE; A FIRST ZONE OF ONE CONDUCTIVITY TYPE EXTENDING INTO SAID BODY FROM SAID SURFACE FORMING A COLLECTOR REGION; A SECOND ZONE OF OPPOSITE CONDUCTIVITY TYPE INSET INTO SAID FIRST ZONE FROM SAID SURFACE FORMING A BASE REGION; A FIRST P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID SECOND ZONE; A THIRD ZONE OF SAID FIRST CONDUCTIVITY TYPE INSET INGO SECOND ZONE FROM SAID SURFACE FORMING AN EMITTER REGION; A SECOND P-N JUNCTION FORMED BETWEEN SAID SECOND AND THIRD ZONES, SAID SECOND P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID THIRD ZONE; FIRST COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE; EMITTER CONTACT MEANS CONTACTING SAID THIRD ZONE AT SAID SURFACE; SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS ESTABLISHING A CURRENT PATH BETWEEN SAID FIRST AND THIRD ZONES THROUGH SAID SECOND ZONE; MEANS FOR APPLYING A FIRST POTENTIAL BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; BASE CONTACT MEANS CONTACTING SAID SECOND ZONE AT SAID SURFACE; MEANS FOR APPLYING A SECOND POTENTIAL TO SAID BASE CONTACT MEANS TO CONTROL THE CURRENT FLOW BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; SECOND COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE, SAID SECOND COLLECTOR BEING REMOTE BOTH FROM SAID CURRENT PATH AND FROM SAID FIRST COLLECTOR CONTACT MEANS; SAID SECOND COLLECTOR CONTACT MEANS OF SAID FIRST TRANSISTOR DIRECTLY CONNECTED TO SAID BASE CONTACT MEANS OF SAID SECOND TRANSISTOR; A FURTHER LOAD MEANS CONNECTED TO SAID SECOND COLLECTOR MEANS OF SAID SECOND TRANSISTOR; AND EACH OF SAID MEANS FOR APPLYING A FIRST POTENTIAL INCLUDES A FIRST AND SECOND SERIALLY CONNECTED P-N JUNCTION DIODES, EACH OF SAID P-N JUNCTION DIODES POLARIZED IN THE FORWARD DIRECTION BY EACH OF THEIR RESPECTIVE TRANSISTOR CURRENT PATHS.
Claim 2
Dependent Claim
576 words
A CIRCUIT ARRANGEMENT COMPRISING: A FIRST TRANSISTOR INCLUDING: A FIRST BODY OF SEMICONDUCTOR MATERIAL, SAID BODY HAVING A MAJOR SURFACE; A FIRST ZONE OF ONE CONDUCTIVITY TYPE EXTENDING INTO SAID BODY FROM SAID SURFACE FORMING A COLLECTOR REGION; A SECOND ZONE OF OPPOSITE CONDUCTIVITY TYPE INSET INTO SAID FIRST ZONE SAID SURFACE FORMING A BASE REGION; A FIRST P-N JUNCTION FORMED BETWEEN SAID FIRST AND SECOND ZONES, SAID P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID SECOND ZONE; A THIRD ZONE OF SAID FIRST CONDUCTIVITY TYPE INSET INTO SAID SECOND ZONE FROM SAID SURFACE FORMING AN EMITTER REGION; A SECOND P-N JUNCTION FORMED BETWEEN SAID SECOND AND THIRD ZONES, SAID SECOND P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID THIRD ZONE; FIRST COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE; EMITTER CONTACT MEANS CONTACTING SAID THIRD ZONE AT SAID SURFACE; SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS ESTABLISHING A CURRENT PATH BETWEEN SAID FIRST AND THIRD ZONES THROUGH SAID SECOND ZONE; MEANS FOR APPLYING A FIRST POTENTIAL BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; BASE CONTACTING MEANS CONTACTING SAID SECOND ZONE AT SAID SURFACE; MEANS FOR APPLYING A SECOND POTENTIAL TO SAID BASE CONTACT MEANS TO CONTROL THE CURRENT FLOW BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; SECOND COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE, SAID SECOND COLLECTOR CONTACT MEANS BEING REMOTE BOTH FROM SAID CURRENT PATH AND FROM SAID FIRST COLLECTOR CONTACT MEANS; LOAD MEANS CONNECTED TO SAID SECOND COLLECTOR CONTACT MEANS, SAID LOAD MEANS COMPRISING A SECOND TRANSISTOR; SAID SECOND TRANSISTOR INCLUDING: A BODY OF SEMICONDUCTOR MATERIAL, SAID BODY HAVING A MAJOR SURFACE; A FIRST ZONE OF ONE CONDUCTIVITY TYPE EXTENDING INTO SAID BODY FROM SAID SURFACE FORMING A COLLECTOR REGION; A SECOND ZONE OF OPPOSITE CONDUCTIVITY TYPE INSET INTO SAID FIRST ZONE FROM SAID SURFACE FORMING A BASE REGION; A FIRST P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID SECOND ZONE; A THIRD ZONE OF SAID FIRST CONDUCTIVITY TYPE INSET INGO SECOND ZONE FROM SAID SURFACE FORMING AN EMITTER REGION; A SECOND P-N JUNCTION FORMED BETWEEN SAID SECOND AND THIRD ZONES, SAID SECOND P-N JUNCTION EXTENDING TO SAID SURFACE AND SURROUNDING SAID THIRD ZONE; FIRST COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE; EMITTER CONTACT MEANS CONTACTING SAID THIRD ZONE AT SAID SURFACE; SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS ESTABLISHING A CURRENT PATH BETWEEN SAID FIRST AND THIRD ZONES THROUGH SAID SECOND ZONE; MEANS FOR APPLYING A FIRST POTENTIAL BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; BASE CONTACT MEANS CONTACTING SAID SECOND ZONE AT SAID SURFACE; MEANS FOR APPLYING A SECOND POTENTIAL TO SAID BASE CONTACT MEANS TO CONTROL THE CURRENT FLOW BETWEEN SAID FIRST COLLECTOR CONTACT MEANS AND SAID EMITTER CONTACT MEANS; SECOND COLLECTOR CONTACT MEANS CONTACTING SAID FIRST ZONE AT SAID SURFACE, SAID SECOND COLLECTOR BEING REMOTE BOTH FROM SAID CURRENT PATH AND FROM SAID FIRST COLLECTOR CONTACT MEANS; SAID SECOND COLLECTOR CONTACT MEANS OF SAID FIRST TRANSISTOR DIRECTLY CONNECTED TO SAID BASE CONTACT MEANS OF SAID SECOND TRANSISTOR; A FURTHER LOAD MEANS CONNECTED TO SAID SECOND COLLECTOR MEANS OF SAID SECOND TRANSISTOR; AND EACH OF SAID MEANS FOR APPLYING A FIRST POTENTIAL INCLUDES A FIRST AND SECOND SERIALLY CONNECTED P-N JUNCTION DIODES, EACH OF SAID P-N JUNCTION DIODES POLARIZED IN THE FORWARD DIRECTION BY EACH OF THEIR RESPECTIVE TRANSISTOR CURRENT PATHS.
References Cited (Backward Citations)
US3284677A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-10-22 | 1972-04-22 | 1972-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-10-22 | 1976-04-22 | 1976-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-10-22 | 1980-04-22 | 1980-10-22 | $7700.00 | Window Closed / Lapsed |