Methods of making a semiconductor structure including opposite conductivity segments

Claim 1

A PROCESS FOR JOINING SINGLE-CRYSTAL SEMICONDUCTOR SEGMENTS OF OPPOSITE CONDUCTIVITY IN A MONOLITHIC-LIKE CRYSTALLINE STRUCTURE COMPRISING THE STEPS OF SELECTING TWO SINGLE-CRYSTAL SEMICONDUCTOR WAFERS OF OPPOSITE CONDUCTIVITY TYPES, PRODUCING AN ARBITRARILY SELECTED PATTERN OF HOLES IN THE SEMICONDUCTOR WAFER OF ONE CONDUCTIVITY TYPE AND A CORRESPONDING ARRAY OF MESAS IN THE SEMICONDUCTOR WAFER OF THE OTHER CONDUCTIVITY TYPE, PLACING SAID MESAS IN SAID HOLES, JOINING THE OPPOSITE CONDUCTIVITY TYPE SEMICONDUCTOR WAFERS BY DEPOSITED ISOLATING CRYSTALLINE MATERIAL AROUND SAID MESAS IN SAID HOLES; REMOVING A PORTION OF SEMICONDUCTOR OF THE OTHER CONDUCTIVITY TYPE UNTIL THE ISOLATING MATERIAL BETWEEN THE TWO TYPES OF SEMICONDUCTORS IS EXPOSED, WHEREBY THE MESAS BECOME ISOLATED SEGMENTS OF THE OTHER CONDUCTIVITY TYPE SEMICONDUCTOR, AND, AS A SEPARATE OPERATION, ISOLATING SEGMENTS OF THE ONE CONDUCTIVITY TYPE SEMICONDUCTOR IN AN ARBITARILY SELECTED PATTERN BY PRODUCING ISOLATING CHANNELS IN SAID ONE CONDUCTIVITY TYPE SEMICONDUCTOR IN SAID DESIRED PATTERN, DEPOSITING ISOLATING MATERIAL IN SAID CHANNELS AND REMOVING A PORTION OF THE RESULTING STRUCTURE ON THE OPPOSITE SIDE OF SAID CHANNELS UNTIL THE ISOLATING MATERIAL IN SAID CHANNELS IS EXPOSED ON THAT SIDE OF THE RESULTING STRUCTURE.