US3401448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making photosensitive semiconductor devices
Assignee: Globe Union Inc
•
Filing: 1964-06-22
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Granted: 1968-09-17
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Expires: 1984-06-22
Abstract
No abstract record available.
Inventors
- 👤 Iles Peter Albert
- 👤 Victoria Rafael Orlando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:16
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10D; H10D84/00; H10D84/01; H10F; H10F39/00; H10F39/10; H10F39/107; H10F99/00; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/12; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
155 words
A PROCESS OF FORMING AN ARRAY OF SEMICONDUCTOR DEVICES, COMPRISING: FORMING A PROTECTIVE NON-CONDUCTING COATING ON THE SURFACE OF A WAFER-LIKE BODY OF SILICON OF A FIRST CONDUCTIVITY TYPE; MASKING THE ENTIRE SURFACE OF SAID COATED BODY EXCEPT FOR A PLURALITY OF SEPARATED AREAS, EACH OF SAID AREAS LYING ON THE TOP OF SAID BODY AND EXTENDING DOWN ONE EDGE THEREOF; REMOVING THE COATING FROM THE UNMASKED AREAS TO EXPOSE THE SILICON; REMOVING THE MASK; EXPOSING SAID BODY TO IMPURITIES OF THE OPPOSITE CONDUCTIVITY TYPE WHEREBY SAID IMPURITIES ARE DIFFUSED INTO SAID EXPOSED AREAS OF SAID BODY TO FORM P-N JUNCTIONS THEREIN, AND A LAYER OF SILICATE GLASS IS FORMED ON SAID BODY; MASKING SUBSTANTIALLY THE ENTIRE TOP OF THE BODY; REMOVING THE GLASS LAYER FROM THE PORTIONS OF SAID AREAS EXTENDING DOWN THE EDGE OF SAID BODY TO EXPOSE THE DIFFUSED SILICON THEREUNDER; AND DEPOSITING A CONTACT MATERIAL ON THE AREAS OF EXPOSED SILICON.
Claim 2
Dependent Claim
155 words
A PROCESS OF FORMING AN ARRAY OF SEMICONDUCTOR DEVICES, COMPRISING: FORMING A PROTECTIVE NON-CONDUCTING COATING ON THE SURFACE OF A WAFER-LIKE BODY OF SILICON OF A FIRST CONDUCTIVITY TYPE; MASKING THE ENTIRE SURFACE OF SAID COATED BODY EXCEPT FOR A PLURALITY OF SEPARATED AREAS, EACH OF SAID AREAS LYING ON THE TOP OF SAID BODY AND EXTENDING DOWN ONE EDGE THEREOF; REMOVING THE COATING FROM THE UNMASKED AREAS TO EXPOSE THE SILICON; REMOVING THE MASK; EXPOSING SAID BODY TO IMPURITIES OF THE OPPOSITE CONDUCTIVITY TYPE WHEREBY SAID IMPURITIES ARE DIFFUSED INTO SAID EXPOSED AREAS OF SAID BODY TO FORM P-N JUNCTIONS THEREIN, AND A LAYER OF SILICATE GLASS IS FORMED ON SAID BODY; MASKING SUBSTANTIALLY THE ENTIRE TOP OF THE BODY; REMOVING THE GLASS LAYER FROM THE PORTIONS OF SAID AREAS EXTENDING DOWN THE EDGE OF SAID BODY TO EXPOSE THE DIFFUSED SILICON THEREUNDER; AND DEPOSITING A CONTACT MATERIAL ON THE AREAS OF EXPOSED SILICON.
References Cited (Backward Citations)
US2794846A
Cited
US2981877A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-09-17 | 1972-03-18 | 1972-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-09-17 | 1976-03-18 | 1976-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-09-17 | 1980-03-18 | 1980-09-17 | $7700.00 | Window Closed / Lapsed |