US3399129A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputer deposition of nickel-iron-manganese ferromagnetic films
Assignee: International Business Machines Corp
•
Filing: 1965-11-15
•
Granted: 1968-08-27
•
Expires: 1985-11-15
Abstract
No abstract record available.
Inventors
- 👤 Barry L Flur
- 👤 Andrew J Griest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:43
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/12; H01F10/14; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12611; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12847; Y10T428/12861; Y10T428/12896; Y10T428/12944
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
232 words
A PROCESS FOR FORMING A MAGNETIC THIN FILM FROM THE NICKEL-IRON-MANAGENESE TERNARY ALLOY SYSTEM BY CATHODICALLY SPUTTERING COMPRISING THE STEPS OF: PROVIDING TWO ELECTRODES IN APPROXIMATELY PARALLEL SPACED RELATIONSHIP ONE TO THE OTHER IN AN ENCLOSURE; MOUNTING ON THE FACE OF ONE ELECTRODE A THIN FERROMAGNETIC TARGET COMPRISING 70 TO 80 PERCENT BY WEIGHT NICKEL, 10 TO 20 PERCENT BY WEIGHT IRON, AND 3 TO 20 PERCENT BY WEIGHT MANGANESE; PLACING IN PROXIMITY TO THE FACE OF SAID SECOND ELECTRODE, THE ANODE, A SUBSTRATE WHERE SAID SUBSTRATE IS SPACED FROM THE FACE OF SAID ANODE BY WAY OF A SUPPORT; REDUCING THE PRESSURE WITHIN SAID ENCLOSURE TO A PREDETERMINED LEVEL; INJECTING A SOURCE OF GASEOUS MATERIAL BETWEEN SAID FIRST AND SAID SECOND ELECTRODE; APPLYING A POTENTIAL BETWEEN SAID TARGET AND SAID ANODE WHILE APPLYING AN ELECTRICAL BIAS TO THE SPUTTERED FILM COLLECTING ON THE SUBSTRATE TO MAINTAIN SAID SPUTTERED FILM AT A NEGATIVE POTENTIAL WITH RESPECT TO THE ANODE BUT AT A POSITIVE POTENTIAL WITH RESPECT TO SAID TARGET, THE APPLICATION OF SAID POTENTIALS BETWEEN SAID TARGET AND SAID ANODE, CAUSING THE GASEOUS MATERIAL TO BOMBARD THE THIN FERROMAGNETIC TARGET AND SPUTTER MATERIAL FROM THE TARGET, WHICH SPUTTERED MATERIAL COLLECTS ON THE SUBSTRATE THEREBY FORMING A MAGNETIC THIN FILM CHARACTERIZED BY UNIFORM MAGNETIC PROPERTIES AND SIMULTANEOUSLY INDUCING A MAGNETIC FIELD SUBSTANTIALLY PARALLEL AT THE SURFACE OF SAID SUBSTRATE AND THROUGH SPUTTERED MATERIAL.
Claim 2
Dependent Claim
232 words
A PROCESS FOR FORMING A MAGNETIC THIN FILM FROM THE NICKEL-IRON-MANAGENESE TERNARY ALLOY SYSTEM BY CATHODICALLY SPUTTERING COMPRISING THE STEPS OF: PROVIDING TWO ELECTRODES IN APPROXIMATELY PARALLEL SPACED RELATIONSHIP ONE TO THE OTHER IN AN ENCLOSURE; MOUNTING ON THE FACE OF ONE ELECTRODE A THIN FERROMAGNETIC TARGET COMPRISING 70 TO 80 PERCENT BY WEIGHT NICKEL, 10 TO 20 PERCENT BY WEIGHT IRON, AND 3 TO 20 PERCENT BY WEIGHT MANGANESE; PLACING IN PROXIMITY TO THE FACE OF SAID SECOND ELECTRODE, THE ANODE, A SUBSTRATE WHERE SAID SUBSTRATE IS SPACED FROM THE FACE OF SAID ANODE BY WAY OF A SUPPORT; REDUCING THE PRESSURE WITHIN SAID ENCLOSURE TO A PREDETERMINED LEVEL; INJECTING A SOURCE OF GASEOUS MATERIAL BETWEEN SAID FIRST AND SAID SECOND ELECTRODE; APPLYING A POTENTIAL BETWEEN SAID TARGET AND SAID ANODE WHILE APPLYING AN ELECTRICAL BIAS TO THE SPUTTERED FILM COLLECTING ON THE SUBSTRATE TO MAINTAIN SAID SPUTTERED FILM AT A NEGATIVE POTENTIAL WITH RESPECT TO THE ANODE BUT AT A POSITIVE POTENTIAL WITH RESPECT TO SAID TARGET, THE APPLICATION OF SAID POTENTIALS BETWEEN SAID TARGET AND SAID ANODE, CAUSING THE GASEOUS MATERIAL TO BOMBARD THE THIN FERROMAGNETIC TARGET AND SPUTTER MATERIAL FROM THE TARGET, WHICH SPUTTERED MATERIAL COLLECTS ON THE SUBSTRATE THEREBY FORMING A MAGNETIC THIN FILM CHARACTERIZED BY UNIFORM MAGNETIC PROPERTIES AND SIMULTANEOUSLY INDUCING A MAGNETIC FIELD SUBSTANTIALLY PARALLEL AT THE SURFACE OF SAID SUBSTRATE AND THROUGH SPUTTERED MATERIAL.
References Cited (Backward Citations)
US3161946A
Cited
US3077444A
Cited
US3024142A
Cited
US3021271A
Cited
US3117065A
Cited
US3160576A
Cited
US3244603A
Cited
US3303116A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-08-27 | 1972-02-26 | 1972-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-08-27 | 1976-02-26 | 1976-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-08-27 | 1980-02-26 | 1980-08-27 | $7700.00 | Window Closed / Lapsed |