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US3399129A Expired / Lapsed US ⏱️ 0.0 years remaining

Sputer deposition of nickel-iron-manganese ferromagnetic films

Assignee: International Business Machines Corp
•
Filing: 1965-11-15
•
Granted: 1968-08-27
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Expires: 1985-11-15
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Abstract

No abstract record available.

Inventors

  • 👤 Barry L Flur
  • 👤 Andrew J Griest

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 18:43
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/12; H01F10/14; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12611; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12847; Y10T428/12861; Y10T428/12896; Y10T428/12944

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 232 words
A PROCESS FOR FORMING A MAGNETIC THIN FILM FROM THE NICKEL-IRON-MANAGENESE TERNARY ALLOY SYSTEM BY CATHODICALLY SPUTTERING COMPRISING THE STEPS OF: PROVIDING TWO ELECTRODES IN APPROXIMATELY PARALLEL SPACED RELATIONSHIP ONE TO THE OTHER IN AN ENCLOSURE; MOUNTING ON THE FACE OF ONE ELECTRODE A THIN FERROMAGNETIC TARGET COMPRISING 70 TO 80 PERCENT BY WEIGHT NICKEL, 10 TO 20 PERCENT BY WEIGHT IRON, AND 3 TO 20 PERCENT BY WEIGHT MANGANESE; PLACING IN PROXIMITY TO THE FACE OF SAID SECOND ELECTRODE, THE ANODE, A SUBSTRATE WHERE SAID SUBSTRATE IS SPACED FROM THE FACE OF SAID ANODE BY WAY OF A SUPPORT; REDUCING THE PRESSURE WITHIN SAID ENCLOSURE TO A PREDETERMINED LEVEL; INJECTING A SOURCE OF GASEOUS MATERIAL BETWEEN SAID FIRST AND SAID SECOND ELECTRODE; APPLYING A POTENTIAL BETWEEN SAID TARGET AND SAID ANODE WHILE APPLYING AN ELECTRICAL BIAS TO THE SPUTTERED FILM COLLECTING ON THE SUBSTRATE TO MAINTAIN SAID SPUTTERED FILM AT A NEGATIVE POTENTIAL WITH RESPECT TO THE ANODE BUT AT A POSITIVE POTENTIAL WITH RESPECT TO SAID TARGET, THE APPLICATION OF SAID POTENTIALS BETWEEN SAID TARGET AND SAID ANODE, CAUSING THE GASEOUS MATERIAL TO BOMBARD THE THIN FERROMAGNETIC TARGET AND SPUTTER MATERIAL FROM THE TARGET, WHICH SPUTTERED MATERIAL COLLECTS ON THE SUBSTRATE THEREBY FORMING A MAGNETIC THIN FILM CHARACTERIZED BY UNIFORM MAGNETIC PROPERTIES AND SIMULTANEOUSLY INDUCING A MAGNETIC FIELD SUBSTANTIALLY PARALLEL AT THE SURFACE OF SAID SUBSTRATE AND THROUGH SPUTTERED MATERIAL.
Claim 2
Dependent Claim 232 words
A PROCESS FOR FORMING A MAGNETIC THIN FILM FROM THE NICKEL-IRON-MANAGENESE TERNARY ALLOY SYSTEM BY CATHODICALLY SPUTTERING COMPRISING THE STEPS OF: PROVIDING TWO ELECTRODES IN APPROXIMATELY PARALLEL SPACED RELATIONSHIP ONE TO THE OTHER IN AN ENCLOSURE; MOUNTING ON THE FACE OF ONE ELECTRODE A THIN FERROMAGNETIC TARGET COMPRISING 70 TO 80 PERCENT BY WEIGHT NICKEL, 10 TO 20 PERCENT BY WEIGHT IRON, AND 3 TO 20 PERCENT BY WEIGHT MANGANESE; PLACING IN PROXIMITY TO THE FACE OF SAID SECOND ELECTRODE, THE ANODE, A SUBSTRATE WHERE SAID SUBSTRATE IS SPACED FROM THE FACE OF SAID ANODE BY WAY OF A SUPPORT; REDUCING THE PRESSURE WITHIN SAID ENCLOSURE TO A PREDETERMINED LEVEL; INJECTING A SOURCE OF GASEOUS MATERIAL BETWEEN SAID FIRST AND SAID SECOND ELECTRODE; APPLYING A POTENTIAL BETWEEN SAID TARGET AND SAID ANODE WHILE APPLYING AN ELECTRICAL BIAS TO THE SPUTTERED FILM COLLECTING ON THE SUBSTRATE TO MAINTAIN SAID SPUTTERED FILM AT A NEGATIVE POTENTIAL WITH RESPECT TO THE ANODE BUT AT A POSITIVE POTENTIAL WITH RESPECT TO SAID TARGET, THE APPLICATION OF SAID POTENTIALS BETWEEN SAID TARGET AND SAID ANODE, CAUSING THE GASEOUS MATERIAL TO BOMBARD THE THIN FERROMAGNETIC TARGET AND SPUTTER MATERIAL FROM THE TARGET, WHICH SPUTTERED MATERIAL COLLECTS ON THE SUBSTRATE THEREBY FORMING A MAGNETIC THIN FILM CHARACTERIZED BY UNIFORM MAGNETIC PROPERTIES AND SIMULTANEOUSLY INDUCING A MAGNETIC FIELD SUBSTANTIALLY PARALLEL AT THE SURFACE OF SAID SUBSTRATE AND THROUGH SPUTTERED MATERIAL.

References Cited (Backward Citations)

US3161946A Cited
US3077444A Cited
US3024142A Cited
US3021271A Cited
US3117065A Cited
US3160576A Cited
US3244603A Cited
US3303116A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-08-27 1972-02-26 1972-08-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-08-27 1976-02-26 1976-08-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-08-27 1980-02-26 1980-08-27 $7700.00 Window Closed / Lapsed

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