US3385982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High power solid state pulse generator with very short rise time
Assignee: General Electric Co
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Filing: 1963-09-03
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Granted: 1968-05-28
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Expires: 1983-09-03
Abstract
No abstract record available.
Inventors
- 👤 Raillard Heinz
- 👤 Hans R Schindler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:36
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/33
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
209 words
AN ELECTRICAL CIRCUIT FOR GENERATING ENERGY IN THE FORM OF AN OUTPUT STEP WAVE OF VERY SHORT RISE-TIME COMPRISING: (A) A FIRST SEMICONDUCTOR DIODE EXHIBITING CHARACTERISTICS OF CHARGE STORAGE AND ABRUPT SWITCHING FROM ITS LOW IMPEDANCE TO ITS HIGH IMPEDANCE STAGE AND CONSTRUCTED TO HAVE A GIVEN MINORITY CARRIER LIFETIME, (B) A SECOND SEMICONDUCTOR DIODE EXHIBITING CHARACTERISTICS OF CHARGE STORAGE AND ABRUPT SWITCHING FROM ITS LOW IMPEDANCE TO ITS HIGH IMPEDANCE STATE AND CONSTRUCTED TO HAVE A MINORITY CARRIER LIFETIME APPRECIABLY SHORTER THAN SAID GIVEN LIFETIME, (C) CIRCUIT MEANS FOR COUPLING SAID FIRST AND SECOND DIODES IN PARALLEL PATHS IN A CASCADED RELATIONSHIP, (D) OUTPUT MEANS CONNECTED IN SHUNT WITH SAID SECOND DIODE, (E) BIASING CIRCUITRY FOR CONDUCTING FORWARD BIAS CURRENTS THROUGH SAID DIODES SO AS TO STORE MINORITY CARRIERS THEREIN AND PROVIDING A STORAGE TIME FOR SAID FIRST DIODE APPRECIABLY GREATER THAN THE STORAGE TIME FOR SAID SECOND DIODE, SAID DIODES BEING IN A LOW IMPEDANCE STATE AND SUPPORTING EASY CURRENT FLOW IN THE BACKWARD DIRECTION DURING THEIR RESPECTIVE STORAGE TIMES, (F) ENERGIZATION MEANS FOR APPLYING INPUT ENERGY TO SAID FIRST DIODE IN THE FORM OF A STEP WAVE OF A POLARITY TO DIRECT CURRENT THROUGH SAID FIRST DIODE IN THE BACKWARD DIRECTION, THE RISE-TIME OF THE APPLIED
Claim 2
Dependent Claim
209 words
AN ELECTRICAL CIRCUIT FOR GENERATING ENERGY IN THE FORM OF AN OUTPUT STEP WAVE OF VERY SHORT RISE-TIME COMPRISING: (A) A FIRST SEMICONDUCTOR DIODE EXHIBITING CHARACTERISTICS OF CHARGE STORAGE AND ABRUPT SWITCHING FROM ITS LOW IMPEDANCE TO ITS HIGH IMPEDANCE STAGE AND CONSTRUCTED TO HAVE A GIVEN MINORITY CARRIER LIFETIME, (B) A SECOND SEMICONDUCTOR DIODE EXHIBITING CHARACTERISTICS OF CHARGE STORAGE AND ABRUPT SWITCHING FROM ITS LOW IMPEDANCE TO ITS HIGH IMPEDANCE STATE AND CONSTRUCTED TO HAVE A MINORITY CARRIER LIFETIME APPRECIABLY SHORTER THAN SAID GIVEN LIFETIME, (C) CIRCUIT MEANS FOR COUPLING SAID FIRST AND SECOND DIODES IN PARALLEL PATHS IN A CASCADED RELATIONSHIP, (D) OUTPUT MEANS CONNECTED IN SHUNT WITH SAID SECOND DIODE, (E) BIASING CIRCUITRY FOR CONDUCTING FORWARD BIAS CURRENTS THROUGH SAID DIODES SO AS TO STORE MINORITY CARRIERS THEREIN AND PROVIDING A STORAGE TIME FOR SAID FIRST DIODE APPRECIABLY GREATER THAN THE STORAGE TIME FOR SAID SECOND DIODE, SAID DIODES BEING IN A LOW IMPEDANCE STATE AND SUPPORTING EASY CURRENT FLOW IN THE BACKWARD DIRECTION DURING THEIR RESPECTIVE STORAGE TIMES, (F) ENERGIZATION MEANS FOR APPLYING INPUT ENERGY TO SAID FIRST DIODE IN THE FORM OF A STEP WAVE OF A POLARITY TO DIRECT CURRENT THROUGH SAID FIRST DIODE IN THE BACKWARD DIRECTION, THE RISE-TIME OF THE APPLIED
References Cited (Backward Citations)
US3200267A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-05-28 | 1971-11-27 | 1972-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-05-28 | 1975-11-27 | 1976-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-05-28 | 1979-11-27 | 1980-05-28 | $7700.00 | Window Closed / Lapsed |