Double heat sink semiconductor diode with glass envelope

Claim 1

IN A SEMICONDUCTOR JUNCTION DIODE INCLUDING A PAIR OF AXIALLY EXTENDING METAL LEADS HAVING SPACED TRANSVERSE END FACES, A METAL CONTACT LAYER AT LEAST PARTIALLY COVERING THE END FACE OF EACH OF SAID LEADS, AND A PELLET OF SEMICONDUCTOR MATERIAL SITUATED BETWEEN THE END FACES OF SAID METAL LEADS AND HAVING A P CONDUCTIVITY TYPE REGION AND AN N CONDUCTIVITY TYPE REGION EACH EXTENDING TO A MAJOR FACE OF SAID PELLET, THE IMPROVEMENT COMPRISING: (A) A SOFT GLASS CYLINDER AXIALLY ENCOMPASSING SAID LEADS AND FUSIBLY SEALED THERETO FORM A HERMETIC ENVELOPE THEREWITH, SAID SOFT GLASS CYLINDER HAVING A GIVEN SEALING TEMPERATURE RANGE: (B) A LAYER OF METAL SOLDER BONDED TO A MAJOR FACE OF SAID PELLET FORMING WITH ONE OF SAID CONTACT LAYERS AN INTER-METALLIC BOND BETWEEN SAID PELLET AND ONE OF SAID LEADS, SAID LAYER OF METAL SOLDER HAVING A EUTECTIC TEMPERATURE WITH SAID ONE CONTACT LAYER LOWER THAN THE GIVEN SEALING TEMPERATURE RANGE; AND (C) A RELATIVELY THICK ELECTRICALLY CONDUCTIVE CUSHION OUTSTANDING FROM THE OTHER MAJOR FACE OF SAID PELLET AND BONDED TO BOTH THE OTHER MAJOR FACE OF SAID PELLET AND THE OTHER OF SAID CONTACT LAYERS, SAID CUSHION HAVING A FIRST EUTECTIC TEMPERATURE WITH SAID OTHER CONTACT LAYER LOWER THAN THE GIVEN SEALING TEMPERATURE RANGE AND HAVING A SECOND EUTECTIC TEMPERATURE WITH SAID PELLET HIGHER THAN THE GIVEN SEALING TEMPERATURE RANGE.