US3371051A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Intrinsic-appearing gallium arsenide compound semiconductor material
Assignee: Individual
•
Filing: 1965-06-22
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Granted: 1968-02-27
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Expires: 1985-06-22
Abstract
No abstract record available.
Inventors
- 👤 Rowland E Johnson
- 👤 Edward W Mehal
- 👤 Ralph J Hach
- 👤 Robert W Haisty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:57
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/04; G; G05; G05F; G05F1/00; G05F1/10; G05F1/625; G05F1/63; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/041; Y10S148/056; Y10S148/107; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
31 words
IN THE PROCESS OF MAKING INTRINSIC-APPEARING GALLIUM ARSENIDE CRYSTALLINE MATERIAL BY HEATING GALLIUM IN THE PRESENCE OF ARSENIC VAPOR, THE STEP OF DOPING SAID GALLIUM ARSENIDE WITH OXYGEN DERIVED FROM AS2O3.
Claim 2
Dependent Claim
31 words
IN THE PROCESS OF MAKING INTRINSIC-APPEARING GALLIUM ARSENIDE CRYSTALLINE MATERIAL BY HEATING GALLIUM IN THE PRESENCE OF ARSENIC VAPOR, THE STEP OF DOPING SAID GALLIUM ARSENIDE WITH OXYGEN DERIVED FROM AS2O3.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-02-26 | 1971-08-28 | 1972-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-02-26 | 1975-08-28 | 1976-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-02-26 | 1979-08-28 | 1980-02-27 | $7700.00 | Window Closed / Lapsed |