US3370927A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of angularly pulling continuous dendritic crystals
Assignee: Westinghouse Electric Corp
•
Filing: 1966-02-28
•
Granted: 1968-02-27
•
Expires: 1986-02-28
Abstract
No abstract record available.
Inventors
- 👤 Jr John W Fanst
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:25
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B15/06; C30B15/36; C30B31/00; C30B31/04; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
205 words
IN THE PROCESS OF PRODUCING THIN CRYSTALS OF A SOLID MATERIAL CRYSTALLIZING IN A DIAMOND CUBIC LATTICE STRUCTURE SELECTED FROM THE GROUP CONSISTING OF SILICON, GERMANIUM, AND STOICHIOMETRIC COMPOUNDS HAVING AN AVERAGE OF 4 VALENCE ELECTRONS PER ATOM, THE STEPS COMPRISING MELTING A QUANTITY OF THE MATERIAL, BRINGING THE MELT TO A TEMPERATURE SLIGHTLY ABOVE THE MELTING POINT OF THE MATERIAL, CONTACTING A SURFACE OF A MELTED MATERIAL WITH A SEED CRYSTAL OF THE MATERIAL FOR A PERIOD OF TIME TO WET THE SEED CRYSTAL WITH THE MELT MATERIAL, THE SEED CRYSTAL HAVING A PLURAL ODD NUMBER OF PARALLEL INTERIOR TWIN PLANES, THE SEED CRYSTAL CONTACTING THE MELT SURFACE AT AN ANGLE OF FROM SUBSTANTIALLY 0 TO 45* OF THE HORIZONTAL, THE TWIN PLANES BEING PARALLEL TO THE <211> DIRECTION, THE DENDRITIC CRYSTAL WHEN ETCHED EXHIBITING TRIANGULAR ETCH PITS ON BOTH FACES WITH THE VERTICES OF THE TRIANGULAR PITS BEING DIRECTED UPWARDLY WITH RESPECT TO THE MELT AND THE FACES OF THE ETCH PITS BEING PARALLEL TO THE MELT SURFACE, SUPERCOOLING THE MELTED MATERIAL TO A SELECTED TEMPERATURE, AND PULLING THE SEED CRYSTAL AT THE RATE OF THE ORDER OF AT LEAST 1 INCH PER MINUTE WITH RESPECT TO THE MELT SURFACE WHILE MAINTAINING THE
Claim 2
Dependent Claim
205 words
IN THE PROCESS OF PRODUCING THIN CRYSTALS OF A SOLID MATERIAL CRYSTALLIZING IN A DIAMOND CUBIC LATTICE STRUCTURE SELECTED FROM THE GROUP CONSISTING OF SILICON, GERMANIUM, AND STOICHIOMETRIC COMPOUNDS HAVING AN AVERAGE OF 4 VALENCE ELECTRONS PER ATOM, THE STEPS COMPRISING MELTING A QUANTITY OF THE MATERIAL, BRINGING THE MELT TO A TEMPERATURE SLIGHTLY ABOVE THE MELTING POINT OF THE MATERIAL, CONTACTING A SURFACE OF A MELTED MATERIAL WITH A SEED CRYSTAL OF THE MATERIAL FOR A PERIOD OF TIME TO WET THE SEED CRYSTAL WITH THE MELT MATERIAL, THE SEED CRYSTAL HAVING A PLURAL ODD NUMBER OF PARALLEL INTERIOR TWIN PLANES, THE SEED CRYSTAL CONTACTING THE MELT SURFACE AT AN ANGLE OF FROM SUBSTANTIALLY 0 TO 45* OF THE HORIZONTAL, THE TWIN PLANES BEING PARALLEL TO THE <211> DIRECTION, THE DENDRITIC CRYSTAL WHEN ETCHED EXHIBITING TRIANGULAR ETCH PITS ON BOTH FACES WITH THE VERTICES OF THE TRIANGULAR PITS BEING DIRECTED UPWARDLY WITH RESPECT TO THE MELT AND THE FACES OF THE ETCH PITS BEING PARALLEL TO THE MELT SURFACE, SUPERCOOLING THE MELTED MATERIAL TO A SELECTED TEMPERATURE, AND PULLING THE SEED CRYSTAL AT THE RATE OF THE ORDER OF AT LEAST 1 INCH PER MINUTE WITH RESPECT TO THE MELT SURFACE WHILE MAINTAINING THE
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-02-26 | 1971-08-28 | 1972-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-02-26 | 1975-08-28 | 1976-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-02-26 | 1979-08-28 | 1980-02-27 | $7700.00 | Window Closed / Lapsed |