US3366520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor polishing of a semiconductor wafer
Assignee: International Business Machines Corp
•
Filing: 1964-08-12
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Granted: 1968-01-30
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Expires: 1984-08-12
Abstract
No abstract record available.
Inventors
- 👤 Berkenblit Melvin
- 👤 Reisman Arnold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:58
CPC Classifications
C; C23; C23F; C23F3/00; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/054; Y10S148/115
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
109 words
THIS METHOD OF VAPOR POLISHING THE SURFACE OF A SINGLE CRYSTAL SEMICONDUCTOR WAFER WHICH HAS BEEN SUBJECTED TO ONE OF THE FOLLOWING TREATMENTS: (A) SAWING (B) SAWING AND LAPPING (C) SAWING, LAPPING AND MECHANICALLY POLISHING (D) SAWING, LAPPING AND CHEMICALLY POLISHING, SAID SEMICONDUCTOR BEING SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON TO ELIMINATE THE RESULTING SURFACE IMPERFECTION AND TO OBTAIN A CLEAN , DAMAGE-FREE, MIRROR SMOOTH SURFACE COMPRISING: SUBJECTING SAID WAFER TO A FLOWING STREAM OF HYDROGEN IODIDE AND A CARRIER GAS AT A TEMPERATURE IN THE RANGE OF 890* TO 920*C. FOR GERMANIUM AND AT A TEMPERATURE IN THE RANGE OF 1200* TO 1300*C. FOR SILICON.
Claim 2
Dependent Claim
109 words
THIS METHOD OF VAPOR POLISHING THE SURFACE OF A SINGLE CRYSTAL SEMICONDUCTOR WAFER WHICH HAS BEEN SUBJECTED TO ONE OF THE FOLLOWING TREATMENTS: (A) SAWING (B) SAWING AND LAPPING (C) SAWING, LAPPING AND MECHANICALLY POLISHING (D) SAWING, LAPPING AND CHEMICALLY POLISHING, SAID SEMICONDUCTOR BEING SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON TO ELIMINATE THE RESULTING SURFACE IMPERFECTION AND TO OBTAIN A CLEAN , DAMAGE-FREE, MIRROR SMOOTH SURFACE COMPRISING: SUBJECTING SAID WAFER TO A FLOWING STREAM OF HYDROGEN IODIDE AND A CARRIER GAS AT A TEMPERATURE IN THE RANGE OF 890* TO 920*C. FOR GERMANIUM AND AT A TEMPERATURE IN THE RANGE OF 1200* TO 1300*C. FOR SILICON.
References Cited (Backward Citations)
US3030189A
Cited
US3218204A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-01-29 | 1971-07-31 | 1972-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-01-29 | 1975-07-31 | 1976-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-01-29 | 1979-07-31 | 1980-01-30 | $7700.00 | Window Closed / Lapsed |