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US3361597A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming a photodiode

Assignee: AT&T Inc
•
Filing: 1963-12-20
•
Granted: 1968-01-02
•
Expires: 1983-12-20
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Abstract

No abstract record available.

Inventors

  • 👤 William M Sharpless

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 02:06
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/11; H10F99/00; H10F71/00; H10F71/134; H10F71/135; Y; Y10; Y10S; Y10S148/00; Y10S148/071

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 125 words
THE METHOD OF FORMLING A PHOTODIODE HAVING A SEMICONDUCTIVE REGION WITH FIRST AND SECOND OPPOSITELY DISPOSED SURFACES AND A POINT CONTACT POSITIONED ON SAID FIRST SURFACE, SAID DIODE BEING DESIGNED FOR OPERATION WITHIN A GIVEN RANGE OF OPERATING CURRENTS; COMPRISING THE STEPS OF APPLYING AN APPROPRIATE NEGATIVE BIAS VOLTAGE, TYPICALLY BETWEEN -15 VOLTS AND -25 VOLTS, BETWEEN SAID REGION AND SAID POINT, ILLUMINATING SAID SECOND SURFACE OF SAID REGION OVER THE AREA BENEATH SAID POINT WITH PHASE COHERENT OPTICAL MASER WAVE ENERGY, SAID ENERGY HAVING AN INTENSITY SUFFICIENT TO CAUSE CURRENTS TO FLOW IN SAID DIODE AT LEAST THREE TIMES THE GREATEST CURRENT VALUE WITHIN SAID RANGE, AND REMOVING SAID ILLUMINATION AND THEN SAID BIAS VOLTAGE WHEN THE ELECTRICAL CHARACTERISTICS OF SAID PHOTODIODE HAVE STABILIZED.
Claim 2
Independent Claim 125 words
THE METHOD OF FORMLING A PHOTODIODE HAVING A SEMICONDUCTIVE REGION WITH FIRST AND SECOND OPPOSITELY DISPOSED SURFACES AND A POINT CONTACT POSITIONED ON SAID FIRST SURFACE, SAID DIODE BEING DESIGNED FOR OPERATION WITHIN A GIVEN RANGE OF OPERATING CURRENTS; COMPRISING THE STEPS OF APPLYING AN APPROPRIATE NEGATIVE BIAS VOLTAGE, TYPICALLY BETWEEN -15 VOLTS AND -25 VOLTS, BETWEEN SAID REGION AND SAID POINT, ILLUMINATING SAID SECOND SURFACE OF SAID REGION OVER THE AREA BENEATH SAID POINT WITH PHASE COHERENT OPTICAL MASER WAVE ENERGY, SAID ENERGY HAVING AN INTENSITY SUFFICIENT TO CAUSE CURRENTS TO FLOW IN SAID DIODE AT LEAST THREE TIMES THE GREATEST CURRENT VALUE WITHIN SAID RANGE, AND REMOVING SAID ILLUMINATION AND THEN SAID BIAS VOLTAGE WHEN THE ELECTRICAL CHARACTERISTICS OF SAID PHOTODIODE HAVE STABILIZED.

References Cited (Backward Citations)

US3018423A Cited
GB985667A Cited
US3122463A Cited
US3212939A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-01-01 1971-07-03 1972-01-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-01-01 1975-07-03 1976-01-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-01-01 1979-07-03 1980-01-02 $7700.00 Window Closed / Lapsed

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