US3353912A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of high-purity materials
Assignee: International Business Machines Corp
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Filing: 1962-03-20
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Granted: 1967-11-21
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Expires: 1982-03-20
Abstract
No abstract record available.
Inventors
- 👤 Norman G Ainslie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:05
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C01; C01B; C01B25/00; C01B25/06; C22; C22C; C22C1/00; C22C1/007; C30B11/00; C30B11/04; C30B11/06; C30B11/065; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/107; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
174 words
THE METHOD OF PREPARING A GROUP III-V SEMICONDUCTOR CRYSTAL WITH A HIGH MOBILITY INA FUSED SILICA VESSEL LOCATED IN A REACTION TUBE COMPRISING THE STEPS OF: PLACING A GROUP III ELEMENT IN THE FUSED SILICA VESSEL IN A FIRST PORTION OF THE REACTION TUBE; PLACING A GROUP V ELEMENT IN A SECOND PORTION OF THE REACTION TUBE; PLACING A QUANTITY OF METALLIC OXIDE IN THE FIRST PORTION OF THE REACTION TUBE WHERE THE QUANTITY IS SELECTED SUCH THAT OXYGEN WITH A ROOM TEMPERATURE PRESSURE BELOW 100 MM. OF MERCURY IS LIBERATED AT THE SYNTHESIS TEMPERATURE OF A MELT OF SAID GROUP III-V SEMICONDUCTOR; EVACATING THE REACTION TUBE; HEATING THE FIRST PORTION OF THE REACTION TUBE TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID GROUP III-V SEMICONDUCTOR AND SIMULTANEOUSLY HEATING THE SECOND PORTION OF THE REACTION TUBE TO A TEMPERATURE ABOVE THE VAPORIZATION POINT OF SAID GROUP V ELEMENT TO SYNTHESIZE A GROUP III-V MELT IN THE VESSEL; AND SUBSEQUENTLY COOLING THE MELT IN THE VESSEL TO FORM THE HIGH MOBILITY GROUP III-V CRYSTAL.
Claim 2
Independent Claim
174 words
THE METHOD OF PREPARING A GROUP III-V SEMICONDUCTOR CRYSTAL WITH A HIGH MOBILITY INA FUSED SILICA VESSEL LOCATED IN A REACTION TUBE COMPRISING THE STEPS OF: PLACING A GROUP III ELEMENT IN THE FUSED SILICA VESSEL IN A FIRST PORTION OF THE REACTION TUBE; PLACING A GROUP V ELEMENT IN A SECOND PORTION OF THE REACTION TUBE; PLACING A QUANTITY OF METALLIC OXIDE IN THE FIRST PORTION OF THE REACTION TUBE WHERE THE QUANTITY IS SELECTED SUCH THAT OXYGEN WITH A ROOM TEMPERATURE PRESSURE BELOW 100 MM. OF MERCURY IS LIBERATED AT THE SYNTHESIS TEMPERATURE OF A MELT OF SAID GROUP III-V SEMICONDUCTOR; EVACATING THE REACTION TUBE; HEATING THE FIRST PORTION OF THE REACTION TUBE TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID GROUP III-V SEMICONDUCTOR AND SIMULTANEOUSLY HEATING THE SECOND PORTION OF THE REACTION TUBE TO A TEMPERATURE ABOVE THE VAPORIZATION POINT OF SAID GROUP V ELEMENT TO SYNTHESIZE A GROUP III-V MELT IN THE VESSEL; AND SUBSEQUENTLY COOLING THE MELT IN THE VESSEL TO FORM THE HIGH MOBILITY GROUP III-V CRYSTAL.
References Cited (Backward Citations)
US2921905A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-20 | 1971-05-22 | 1971-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-20 | 1975-05-22 | 1975-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-20 | 1979-05-22 | 1979-11-21 | $7700.00 | Window Closed / Lapsed |