US3344002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing epitaxial layers on semiconductor monocrystals
Assignee: Siemens and Halske AG
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Filing: 1962-11-21
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Granted: 1967-09-26
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Expires: 1982-11-21
Abstract
Abstract Dendritic crystals grown by the process of Specification 993,701 have an epitaxial deposition on the 111 surfaces by reduction of the temperature of the charge in the heated reaction vessel to give a temperature gradient which favours epitaxial growth, the layers so built up may result in a different conductivity type by altering the concentration of the doping material. Thus, gallium arsenide dendrites may have epitaxial layers deposited in the presence of zinc to produce p-type conductivity. By varying the temperature of sections of a tube containing doping material and gallium arsenide, successive layers of different conductivity may be built up. Reference is also made to formation of epitaxial layers on AIIBVI and AIIIBV compounds and on Group IV elements.
Inventors
- 👤 Sirtl Erhard
- 👤 Dersin Hansjurgen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; C; C30; C30B; C30B25/00; C30B25/005; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10P14/24; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S117/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
141 words
METHOD OF PRODUCING SEMICONDUCTOR MONOCRYSTALS BY PRECIPITATION FROM THE GASEOUS PHASE WHICH COMPRISES INTRODUCING STARTING MATERIALS INTO A SEALED HEATABLE REACTION VESSEL IN WHICH DIFFERENT TEMPERATURE DISTRIBUTIONS ARE ADJUSTABLE, FORMING A HIGHLY HEATED REACTION GAS MIXTURE WITHIN THE REACTION VESSEL, RAPIDLY AND INTENSELY COOLING A PORTION OF THE REACTION VESSEL AND THE GAS CONTAINED THEREIN SO THAT DENDRITIC GROWTH OF SEMICONDUCTOR MONOCRYSTALS ENSUES, AFTER TERMINATION OF TEH DENDRITIC GROWTH MAINTAINING THE TEMPERATURE (TII) IN THE VESSEL PORTION CONTAINING THE STARTING MATERIAL AT A VALUE SLIGHTLY BELOW THE TEMPERATURE (TIII) OF THE VESSEL PORTION IN WHICH THE DENDRITIC GROWTH TOOK PLACE, AND SIMULTANEOUSLY MAINTAINING THE TEMPERATURE (TIII) AT THE VALUE REQUIRED FOR DENDRITE PRODUCTION SO THAT THE STARTING MATERIALS TRANSPORTED VIA THE GASEOUS PHASE GROW PREDOMINANTLY EPITAXIALLY UPON THE SURFACES OF THE DENDRITE MONOCRYSTALS WITHOUT APPRECIABLY CHANGING THEIR LENGTH AND CRYSTALLINE CONSTITUTION.
Claim 2
Dependent Claim
141 words
METHOD OF PRODUCING SEMICONDUCTOR MONOCRYSTALS BY PRECIPITATION FROM THE GASEOUS PHASE WHICH COMPRISES INTRODUCING STARTING MATERIALS INTO A SEALED HEATABLE REACTION VESSEL IN WHICH DIFFERENT TEMPERATURE DISTRIBUTIONS ARE ADJUSTABLE, FORMING A HIGHLY HEATED REACTION GAS MIXTURE WITHIN THE REACTION VESSEL, RAPIDLY AND INTENSELY COOLING A PORTION OF THE REACTION VESSEL AND THE GAS CONTAINED THEREIN SO THAT DENDRITIC GROWTH OF SEMICONDUCTOR MONOCRYSTALS ENSUES, AFTER TERMINATION OF TEH DENDRITIC GROWTH MAINTAINING THE TEMPERATURE (TII) IN THE VESSEL PORTION CONTAINING THE STARTING MATERIAL AT A VALUE SLIGHTLY BELOW THE TEMPERATURE (TIII) OF THE VESSEL PORTION IN WHICH THE DENDRITIC GROWTH TOOK PLACE, AND SIMULTANEOUSLY MAINTAINING THE TEMPERATURE (TIII) AT THE VALUE REQUIRED FOR DENDRITE PRODUCTION SO THAT THE STARTING MATERIALS TRANSPORTED VIA THE GASEOUS PHASE GROW PREDOMINANTLY EPITAXIALLY UPON THE SURFACES OF THE DENDRITE MONOCRYSTALS WITHOUT APPRECIABLY CHANGING THEIR LENGTH AND CRYSTALLINE CONSTITUTION.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-25 | 1971-03-27 | 1971-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-25 | 1975-03-27 | 1975-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-25 | 1979-03-27 | 1979-09-26 | $7700.00 | Window Closed / Lapsed |