Solid state non-erasable optical memory sensing system

Claim 1

AN OPTICAL HIGH DENSITY MEMORY SYSTEM COMPRISING A TRANSPARENT ELECTRICAL CONDUCTOR EXTENDING IN AN X-AXIS DIRECTION, ELECTRICAL CONDUCTORS EXTENDING TRANSVERSELY TO SAID TRANSPARENT CONDUCTORS ALONG THE Y-AXIS DIRECTION AND PLACED IN AN ADJACENT SPACED RELATION TO SAID TRANSPARENT CONDUCTORS TO FORM THEREWITH A PLURALITY OF SPACED INTERSECTIONS, A PHOTOCONDUCTOR PANEL INTERPOSED IN AN ELECTRICAL CONTACTING RELATION BETWEEN SAID X-AXIS CONDUCTORS AND SAID Y-AXIS CONDUCTORS AND EXTENDING TO COVER SUBSTANTIALLY ALL OF THE SPACED INTERSECTIONS OF SAID X-AXIS AND Y-AXIS CONDUCTORS AND PHYSICALLY CONTACTING AT OPPOSITE SIDES OF X-AXIS AND Y-AXIS CONDUCTORS AT SAID INTERSECTIONS, AN ELECTROLUMINESCENT PANEL ADJACENT SAID TRANSPARENT CONDUCTORS OPERABLE TO SUPPLY A SOURCE OF ILLUMINATION, AN INFORMATION MASK HAVING MICRO-PHOTOGRAPHIC TRANSPARENT AREAS AND OPAQUE AREAS, DENOTING THE BINARY SYSTEM, SAID INFORMATION MASK BEING INSERTABLE BETWEEN SAID ELECTROLUMINESCENT PANEL AND SAID TRANSPARENT CONDUCTORS, THE TRANSPARENT AREAS OF SAID INFORMATION MASK SELECTIVELY OVERLYING INTERSECTIONS OF SAID X-ASIS AND Y-AXIS CONDUCTORS ACCORDING TO A PREDETERMINED CODED INFORMATION MATRIX DEFINED ON SAID MASK TO PERMIT LIGHT FROM SAID ELECTROLUMNESCENT PANEL TO BE DIRECTED THROUGH SAID TRANSPARENT AREAS TO IMPINGE ONTO SAID PHOTOCONDUCTOR PANEL TO MAKE SAID PHOTOCONDUCTIVE PANEL ELECTRICALLY CONDUCTIVE AT SAID AREAS TO SELECTIVELY CONNECT SAID X-AXIS AND Y-AXIS CONDUCTORS, AND A COMPUTER MEANS OPERABLE TO RECEIVE ELECTRICAL SIGNALS APPLIED TO THE Y-AXIS CONDUCTORS THROUGH THE SELECTIVELY CONDUCTIVE AREAS AT SAID INTERSECTIONS TO THEREBY READ THE INFORMATION OF SAID MASK.