US3341377A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface-passivated alloy semiconductor devices and method for producing the same
Assignee: Fairchild Semiconductor Corp
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Filing: 1964-10-16
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Granted: 1967-09-12
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Expires: 1984-10-16
Abstract
No abstract record available.
Inventors
- 👤 Henry A Wacker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:48
CPC Classifications
H; H10; H10P; H10P32/00; H10D; H10D99/00; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
126 words
A METHOD FOR FORMING A PN JUNCTION IN A SOLID STATE DEVICE THAT INCLUDES A MONOCRYSTALLINE SEMICONDUCTOR BODY OF ONE CONDUCTIVITY TYPE WITH SURFACE, THE STEPS COMPRISING; FORMING A DIFFUSED REGION WITH IN SAID BODY HAVING A CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID BODY AND FORMING A PN JUNCTION THEREWITH EXTENDING TO THE SURFACE OF SAID BODY; FORMING A PROTECTIVE COATING OVER AT LEAST A PART OF THE JUNCTION WHERE IT EXTENDS TO THE SURFACE OF THE BODY, SAID COATING FORMED TO EXPOSE A PORTION OF THE DIFFUSED REGION; AND ALLOYING THE EXPOSED PORTION OF THE DIFFUSED REGION AND THE BODY WITH A MATERIAL HAVING THE SAME CONDUCTIVITY TYPE AS THE DIFFUSED REGION TO FORM AN ALLOY JUNCTION WITH SAID WAFER BELOW SAID WATER SURFACE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-09-11 | 1971-03-13 | 1971-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-09-11 | 1975-03-13 | 1975-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-09-11 | 1979-03-13 | 1979-09-12 | $7700.00 | Window Closed / Lapsed |