Frequency selecting signal translation system utilizing a passive voltage network and an active regenerative amplifier

Claim 1

AS A NEW ARTICLE OF MANUFACTURE, A SEMICONDUCTIVE DEVICE IN A MONOLITHIC BLOCK CONSTITUTING A PASSIVE DISTRIBUTED R-C NETWORK HAVING A BANDPASS VOLTAGE GAIN CHARACTERISTIC GREATER THAN UNITY, SAID DEVICE COMPRISING A FIRST SEMICONDUCTOR REGION OF ONE TYPE OF SEMICONDUCTIVITY AND A SECOND SEMICONDUCTOR REGION OF OPPOSITE SEMICONDUCTIVITY TYPE, SAID REGIONS BEING JOINED IN CONTIGUOUS OFRELATION TO FORM A P-N JUNCTION, SAID CONTIGUOUS REGIONS OF SAID JUNCTION FORMING A DISTRIBUTED CAPACITANCE AND THE FIRST OF SAID REGIONS FORMING THE DISTRIBUTED RESISTANCE OF SAID PASSIVE NETWORK, AN ACTIVE AMPLIFIER CONNECTED TO SAID PASSIVE NETWORK COMPRISING A SEMICONDUCTOR CONFIGURATION HAVING ITS BASE CONNECTED TO ONE END OF SAID FIRST REGION, THE OTHER END OF SAID FIRST REGION BEING CONNECTED TO A.C. GROUND, BIASING MEANS CONNECTED TO SAID FIRST SEMICONDUCTOR REGION FOR BIASING THE BASE OF SAID AMPLIFIER, SAID AMPLIFIER BEING CONNECTED AS AN EMITTER FOLLOWER AND HAVING A RESISTOR IN THE EMITTER CIRCUIT ACROSS WHICH A VOLTAGE DROP IS DEVELOPED AND MEANS CONNECTED FROM THE OUTPUT CIRCUIT OF SAID EMITTER-FOLLOWER TO SAID SECOND SEMICONDUCTOR REGION TO PRODUCE ZERO PHASE REGENERATIVE FEEDBACK.