US3332143A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices with epitaxial contour
Assignee: General Electric Co
•
Filing: 1964-12-28
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Granted: 1967-07-25
•
Expires: 1984-12-28
Abstract
No abstract record available.
Inventors
- 👤 Finis E Gentry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:50
CPC Classifications
H; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
THE METHOD OF PRODUCING SEMICONDUCTOR DEVICES INCLUDING STARTING WITH A SEMICONDUCTOR WAFER HAVING AT LEAST TWO ZONES OF OPPOSITE CONDUCTIVITY TYPE DEFINING AT LEAST ONE RECTIFYING JUNCTION OF SUBJACENT A FACE THEREOF, FORMING GROOVES IN SAID FACE PORTION EXTENDING THROUGH THE SAID JUNCTION AND DEFINING INDIVIDUAL PELLETS FOR SUBSEQUENT PELLETIZING, EPITAXIALLY DEPOSITING A LAYER FOR SEMICONDUCTOR MATERIAL OF THE SAME CONDUCTIVITY AS THE FACE PORTION BUT LIGHTLY DOPED RELATIVE THERETO ON THE SURFACE OF SAID GROOVED FACE AND IN SAID GROOVES WHEREBY THE PORTIONS OF SAID JUNCTION EXPOSED BY SAID GROOVES ARE COVERED BY SAID LIGHTLY DOPED LAYER, REMOVING SELECTED PORTIONS OF SAID DEPOSITED LAYER FOR SUBSEQUENT ATTACHMENT OF ELECTRODES WHILE LEAVING SAID JUNCTION PORTIONS COVERED, AND SEVERING THE WAFER ALONG THE GROOVES TO PRODUCE INDIVIDUAL JUNCTION-PROTECTED UNITS.
Claim 2
Independent Claim
128 words
THE METHOD OF PRODUCING SEMICONDUCTOR DEVICES INCLUDING STARTING WITH A SEMICONDUCTOR WAFER HAVING AT LEAST TWO ZONES OF OPPOSITE CONDUCTIVITY TYPE DEFINING AT LEAST ONE RECTIFYING JUNCTION OF SUBJACENT A FACE THEREOF, FORMING GROOVES IN SAID FACE PORTION EXTENDING THROUGH THE SAID JUNCTION AND DEFINING INDIVIDUAL PELLETS FOR SUBSEQUENT PELLETIZING, EPITAXIALLY DEPOSITING A LAYER FOR SEMICONDUCTOR MATERIAL OF THE SAME CONDUCTIVITY AS THE FACE PORTION BUT LIGHTLY DOPED RELATIVE THERETO ON THE SURFACE OF SAID GROOVED FACE AND IN SAID GROOVES WHEREBY THE PORTIONS OF SAID JUNCTION EXPOSED BY SAID GROOVES ARE COVERED BY SAID LIGHTLY DOPED LAYER, REMOVING SELECTED PORTIONS OF SAID DEPOSITED LAYER FOR SUBSEQUENT ATTACHMENT OF ELECTRODES WHILE LEAVING SAID JUNCTION PORTIONS COVERED, AND SEVERING THE WAFER ALONG THE GROOVES TO PRODUCE INDIVIDUAL JUNCTION-PROTECTED UNITS.
References Cited (Backward Citations)
US2980830A
Cited
US3040218A
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US3000768A
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US3165811A
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US3152939A
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US3135638A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-07-24 | 1971-01-23 | 1971-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-07-24 | 1975-01-23 | 1975-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-07-24 | 1979-01-23 | 1979-07-25 | $7700.00 | Window Closed / Lapsed |