Compression bonded semiconductor device

Claim 1

A HERMETICALLY SEALED SEMICONDUCTOR DEVICE COMPRISING A WAFER OF SEMICONDUCTOR MATERIAL HAVING AT LEAST ONE JUNCTION THEREIN, A FIRST ELECTRODE PLATE IN SURFACE-TOSURFACE CONTACT WITH THE UPPER SURFACE OF SAID WAFER, A SECOND ELECTRODE PLATE IN SURFACE-TO-SURFACE CONTACT WITH THE BOTTOM SURFACE OF SAID WAFER, SAID FIRST AND SECOND ELECTRODE PLATES HAVING A TEMPERATURE COEFFICIENT OF EXPANSION SIMILAR TO THAT OF SAID SEMICONDUCTOR MATERIAL AND PERIPHERAL SEALING MEANS EXTENDING AROUND THE PERIPHERIES OF SAID FIRST AND SECOND ELECTRODE PLATES AND SAID WAFER MECHANICALLY CONNECTED FROM SAID FIRST ELECTRODE PLATE TO SAID SECOND ELECTRODE PLATE; SAID PERIPHERAL SEALING MEANS AT LEAST PARTIALLY INCLUDING AN INSULATION RING FOR ELECTRICALLY INSULATING SAID FIRST AND SECOND ELECTRODE PLATES; SAID FIRST AND SECOND ELECTRODE PLATES DEFINING THE TOP AND BOTTOM WALLS OF A HERMETICALLY SEALING ENCLOSURE FOR SAID WAFER; SAID SECOND ELECTRODE PLATE HAVING A PLURALITY OF PROJECTIONS EXTENDING AROUND THE PERIPHERY OF SAID WAFER TO POSITION SAID WAFER WITHIN SAID PROJECTIONS.