US3323955A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: US Philips Corp
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Filing: 1964-02-20
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Granted: 1967-06-06
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Expires: 1984-02-20
Abstract
No abstract record available.
Inventors
- 👤 Jochems Pieter Johan Wilhelmus
- 👤 Werdt Reinier De
- 👤 Nobel Dirk De
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:51
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; C; C07; C07J; C07J1/00; C07J75/00; C30; C30B; C30B31/00; C30B31/04; H10D10/00; H10D99/00; H10P; H10P10/00; H10P32/00; H10P32/10; H10P32/16; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
193 words
A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING FORMING IN A SEMICONDUCTOR BODY A SURFACE LAYER CONTAINING ACCEPTOR OR DONOR IMPURITIES IN A SURFACE CONCENTRATION OF A LEAST ABOUT 10**19/CM.3, FUSING AND ALLOYING AT SAID SURFACE LAYER A SOLVENT METAL CONTAINING IMPURITIES OF THE OPPOSITE CHARACTER TO THAT CONTAINED IN THE SURFACE LAYER AND PENETRATING THROUGH THE SURFACE LAYER SO THAT UPON SUBSEQUENT COOLING A HIGHLY-CONDUCTIVE RECRYSTALLIZED REGION DOPED WITH SAID OPPOSITE IMPURITIES AND FORMING A P-N JUNCTION WITH SAID SURFACE LAYER IS PRODUCED, SAID METAL ALSO INCLUDING AN ELEMENT WHICH WHEN HEATED IS CAPABLE OF COMBINING WITH THE IMPURITIES IN THE SURFACE LAYER TO SUCH A HIGH DEGREE THAT THE FREE IMPURITY CONCENTRATION ADJACENT THE RECRYSTALLIZED REGION IS SIGNIFICANTLY LOWER THAN THE IMPURITY CONCENTRATION AT A CORRESPONDING LEVEL ELSEWHERE IN THE BODY, FURTHER HEATING SAID METAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO CAUSE THE SAID COMBINING ELEMENT TO SELECTIVELY ABSORB THE LAYER IMPURITIES AND DECREASE THEIR CONCENTRATION ADJACENT THERETO, COOLING THE ASSEMBLY A SOLIDIFY THE MELT FORMING THE SAID RECRYSTALLIZED REGION ADJACENT THE IMPURITY-DEPLETED REGIONS OF THE SURFACE LAYER, AND PROVIDING CONNECTIONS TO THE SURFACE LAYER AND SOLIDIFIED METAL.
Claim 2
Independent Claim
193 words
A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING FORMING IN A SEMICONDUCTOR BODY A SURFACE LAYER CONTAINING ACCEPTOR OR DONOR IMPURITIES IN A SURFACE CONCENTRATION OF A LEAST ABOUT 10**19/CM.3, FUSING AND ALLOYING AT SAID SURFACE LAYER A SOLVENT METAL CONTAINING IMPURITIES OF THE OPPOSITE CHARACTER TO THAT CONTAINED IN THE SURFACE LAYER AND PENETRATING THROUGH THE SURFACE LAYER SO THAT UPON SUBSEQUENT COOLING A HIGHLY-CONDUCTIVE RECRYSTALLIZED REGION DOPED WITH SAID OPPOSITE IMPURITIES AND FORMING A P-N JUNCTION WITH SAID SURFACE LAYER IS PRODUCED, SAID METAL ALSO INCLUDING AN ELEMENT WHICH WHEN HEATED IS CAPABLE OF COMBINING WITH THE IMPURITIES IN THE SURFACE LAYER TO SUCH A HIGH DEGREE THAT THE FREE IMPURITY CONCENTRATION ADJACENT THE RECRYSTALLIZED REGION IS SIGNIFICANTLY LOWER THAN THE IMPURITY CONCENTRATION AT A CORRESPONDING LEVEL ELSEWHERE IN THE BODY, FURTHER HEATING SAID METAL AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO CAUSE THE SAID COMBINING ELEMENT TO SELECTIVELY ABSORB THE LAYER IMPURITIES AND DECREASE THEIR CONCENTRATION ADJACENT THERETO, COOLING THE ASSEMBLY A SOLIDIFY THE MELT FORMING THE SAID RECRYSTALLIZED REGION ADJACENT THE IMPURITY-DEPLETED REGIONS OF THE SURFACE LAYER, AND PROVIDING CONNECTIONS TO THE SURFACE LAYER AND SOLIDIFIED METAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-06-05 | 1970-12-05 | 1971-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-06-05 | 1974-12-05 | 1975-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-06-05 | 1978-12-05 | 1979-06-06 | $7700.00 | Window Closed / Lapsed |