US3321384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing semiconductorfilm hall devices on oxide-metal substrate
Assignee: Individual
•
Filing: 1964-10-27
•
Granted: 1967-05-23
•
Expires: 1984-10-27
Abstract
No abstract record available.
Inventors
- 👤 Harry H Wieder
- 👤 Arthur R Clawson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:22
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/01
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
119 words
THE PROCESS OF FABRICATING IMPROVED SEMICONDUCTOR DEVICES FOR HALL GENERATORS, AND MAGNETO-RESISTIVE DEVICES, COMPRISING: (A) ANODIZING A REFRACTORY METAL SUBSTRATE TO FORM AN INSULATING SURFACE WHICH HAS A THERMAL EXPANSION COMPATIBLE WITH A SEMICONDUCTOR FILM TO BE DEPOSITED THEREON, (B) VACUUM DEPOSITING A FILM SELECTED FROM THE GROUP CONSISTING OF INSB AND INAS ONTO THE INSULATING ANODIZED SURFACE OF SAID METAL SUBSTRATE, (C) OVERCOATING SAID SEMICONDUCTOR FILM IN A VACUUM WITH A LAYER OF INDIUM OF FROM 100 A. TO 200 A. THICKNESS, (D) RADIANT HEATING THE COMPOSITE FILM TO CAUSE RECRYSTALLIZATION THEREOF OF SAID FILM INTO LARGE CRYSTAL GRAINS AND FUSING OF THE SEMICONDUCTOR FILM TO THE ANODIZED SURFACEWITHOUT CHEMICAL INTERACTION BETWEEN THE ANODIZED SURFACE AND THE FILM.
Claim 2
Dependent Claim
119 words
THE PROCESS OF FABRICATING IMPROVED SEMICONDUCTOR DEVICES FOR HALL GENERATORS, AND MAGNETO-RESISTIVE DEVICES, COMPRISING: (A) ANODIZING A REFRACTORY METAL SUBSTRATE TO FORM AN INSULATING SURFACE WHICH HAS A THERMAL EXPANSION COMPATIBLE WITH A SEMICONDUCTOR FILM TO BE DEPOSITED THEREON, (B) VACUUM DEPOSITING A FILM SELECTED FROM THE GROUP CONSISTING OF INSB AND INAS ONTO THE INSULATING ANODIZED SURFACE OF SAID METAL SUBSTRATE, (C) OVERCOATING SAID SEMICONDUCTOR FILM IN A VACUUM WITH A LAYER OF INDIUM OF FROM 100 A. TO 200 A. THICKNESS, (D) RADIANT HEATING THE COMPOSITE FILM TO CAUSE RECRYSTALLIZATION THEREOF OF SAID FILM INTO LARGE CRYSTAL GRAINS AND FUSING OF THE SEMICONDUCTOR FILM TO THE ANODIZED SURFACEWITHOUT CHEMICAL INTERACTION BETWEEN THE ANODIZED SURFACE AND THE FILM.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-05-22 | 1970-11-21 | 1971-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-05-22 | 1974-11-21 | 1975-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-05-22 | 1978-11-21 | 1979-05-23 | $7700.00 | Window Closed / Lapsed |