US3312880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Four-layer semiconductor switching device having turn-on and turn-off gain
Assignee: GTE Sylvania Inc
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Filing: 1962-12-12
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Granted: 1967-04-04
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Expires: 1982-12-12
Abstract
No abstract record available.
Inventors
- 👤 Thomas A Longo
- 👤 Miller Marvin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:02
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/60; C; C30; C30B; C30B31/00; C30B31/02; H10D1/00; H10D1/40; H10D62/00; H10D62/10; H10D62/13; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
A SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL INCLUDING FOUR ZONES OF ALTERNATING CNDUCTIVITY TYPE ARRANGED IN SUCCESSION ON A DEGENERATE SUBSTRATE OF SEMICONDUCTOR MATERIAL OF VERY LOW RESISTIVITY OF ONE CONDUCTIVITY TYPE, THE FIRST OF SAID ZONES CONTIGUOUS SAID SUBSTRATE BEING OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL OF THE ONE CONDUCTIVITY TYPE, THE SECOND OF SAID ZONES FORMING A PN JUNTION WITH SAID FIRST ZONE AND BEING OF MODERATE RESISTIVITY SEMICONDUCTOR MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE. THE MODERATE RESISTIVITY OF THE SECOND OF SAID ZONES BEING LOWER THAN THE HIGH RESISTIVITY OF THE FIRST OF SAID ZONES AND BEING HIGHER THAN THE VERY LOW RESISTIVITY OF SAID SUBSTRATE, THE THIRD OF SAID ZONES FORMING A GRADED PN JUNCTION WITH SAID SECOND ZONE AND BEING SEMICONDUCTOR MATERIAL OF THE ONE CONDUCTIVITY TYPE, THE RESISTIVITYOF THE THIRD OF SAID ZONES DECREASING WITH DISTANCE FROM THE JUNCTION WITH THE SECOND ZONE,
Claim 2
Dependent Claim
150 words
A SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL INCLUDING FOUR ZONES OF ALTERNATING CNDUCTIVITY TYPE ARRANGED IN SUCCESSION ON A DEGENERATE SUBSTRATE OF SEMICONDUCTOR MATERIAL OF VERY LOW RESISTIVITY OF ONE CONDUCTIVITY TYPE, THE FIRST OF SAID ZONES CONTIGUOUS SAID SUBSTRATE BEING OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL OF THE ONE CONDUCTIVITY TYPE, THE SECOND OF SAID ZONES FORMING A PN JUNTION WITH SAID FIRST ZONE AND BEING OF MODERATE RESISTIVITY SEMICONDUCTOR MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE. THE MODERATE RESISTIVITY OF THE SECOND OF SAID ZONES BEING LOWER THAN THE HIGH RESISTIVITY OF THE FIRST OF SAID ZONES AND BEING HIGHER THAN THE VERY LOW RESISTIVITY OF SAID SUBSTRATE, THE THIRD OF SAID ZONES FORMING A GRADED PN JUNCTION WITH SAID SECOND ZONE AND BEING SEMICONDUCTOR MATERIAL OF THE ONE CONDUCTIVITY TYPE, THE RESISTIVITYOF THE THIRD OF SAID ZONES DECREASING WITH DISTANCE FROM THE JUNCTION WITH THE SECOND ZONE,
References Cited (Backward Citations)
US3220896A
Cited
US3197681A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-04-03 | 1970-10-03 | 1971-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-04-03 | 1974-10-03 | 1975-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-04-03 | 1978-10-03 | 1979-04-04 | $7700.00 | Window Closed / Lapsed |