US3303549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor devices utilizing vacuum welding
Assignee: Lockheed Martin Corp
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Filing: 1964-03-23
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Granted: 1967-02-14
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Expires: 1984-03-23
Abstract
No abstract record available.
Inventors
- 👤 William P Peyser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:29
CPC Classifications
H; H10; H10W; H10W90/00; H10P; H10P10/00; H10P10/12; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
69 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SAID METHOD COMPRISING THE STEPS OF SEPARATELY MAKING COMPONENT MEMBERS OF SAID DEVICE, WHICH MEMBERS ARE METALLURIGICALLY COMPATIBLE AND HAVE DIFFERENT CONDUCTIVITIES, CLEANING THOSE SURFACES OF SAID COMPONENT MEMBERS WHICH ARE TO BE JOINED, PLACING SAID CLEANED SURFACES OF SAID MEMBERS TO MATING RELATIONSHIP, THEN VACUUM WELDING SAID MEMBERS IN THE ABSENCE OF ANY SUBSTANTIAL MECHANICAL PRESSURE THEREON BY SUBJECTING THEM TO
Claim 2
Independent Claim
69 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SAID METHOD COMPRISING THE STEPS OF SEPARATELY MAKING COMPONENT MEMBERS OF SAID DEVICE, WHICH MEMBERS ARE METALLURIGICALLY COMPATIBLE AND HAVE DIFFERENT CONDUCTIVITIES, CLEANING THOSE SURFACES OF SAID COMPONENT MEMBERS WHICH ARE TO BE JOINED, PLACING SAID CLEANED SURFACES OF SAID MEMBERS TO MATING RELATIONSHIP, THEN VACUUM WELDING SAID MEMBERS IN THE ABSENCE OF ANY SUBSTANTIAL MECHANICAL PRESSURE THEREON BY SUBJECTING THEM TO
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-13 | 1970-08-15 | 1971-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-13 | 1974-08-15 | 1975-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-13 | 1978-08-15 | 1979-02-14 | $7700.00 | Window Closed / Lapsed |