US3303053A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern diamond growth on dimaond crystals
Assignee: General Electric Co
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Filing: 1963-03-26
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Granted: 1967-02-07
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Expires: 1983-03-26
Abstract
No abstract record available.
Inventors
- 👤 Herbert M Strong
- 👤 Roy E Tuft
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:53
CPC Classifications
B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/061; B01J2203/065; B01J2203/0655; B01J2203/0675; B01J2203/068; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24628; Y10T428/24736; Y10T428/24802; Y10T428/30
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
THE METHOD OF GROWING A PREDETERMED PATTERN OF DIAMOND GROWTH ON A DIAMOND SURFACE WHICH COMPRISES: (A) OVERLAYING LESS THAN THE FULL AREA OF A SURFACE OF A DIAMOND WITH A PATTERN-DEFINING MEANS, (1) SAID PATTER-DEFINING MEANS BEING MADE OF METAL CATALYTIC TO THE DIAMOND FORMING REACTION, (B) SUBJECTING SAID DIAMOND AND SAID PATTERN-DEFINING MEANS TOGETHER WITH CARBONACEOUS MATERIAL COVERING SAID DIAMOND SURFACE AND SAID PATTER-DEFINING MEANS TO A COMBINATION OF PRESSURES AND TEMPERATURES ABOVE THE GRAPHITE-TO-DIAMOND EUILIBRIUM LINE ON THE PHASE DIAGRAM OF CARBON WHEREBY MORE DIAMOND GROWTH OCCURS ON THE UNCOVERED PORTION OF SAID DIAMOND, AND (C) REDUCING THE TEMPERATURE AND PRESSURE AND RECOVERING SAID DIAMOND WITH A PREDETERMINED PATTERN OF GROWTH THEREON SUBSTANTIALLY CORRESPONDING TO SAID UNCOVERED PORTION.
Claim 2
Independent Claim
121 words
THE METHOD OF GROWING A PREDETERMED PATTERN OF DIAMOND GROWTH ON A DIAMOND SURFACE WHICH COMPRISES: (A) OVERLAYING LESS THAN THE FULL AREA OF A SURFACE OF A DIAMOND WITH A PATTERN-DEFINING MEANS, (1) SAID PATTER-DEFINING MEANS BEING MADE OF METAL CATALYTIC TO THE DIAMOND FORMING REACTION, (B) SUBJECTING SAID DIAMOND AND SAID PATTERN-DEFINING MEANS TOGETHER WITH CARBONACEOUS MATERIAL COVERING SAID DIAMOND SURFACE AND SAID PATTER-DEFINING MEANS TO A COMBINATION OF PRESSURES AND TEMPERATURES ABOVE THE GRAPHITE-TO-DIAMOND EUILIBRIUM LINE ON THE PHASE DIAGRAM OF CARBON WHEREBY MORE DIAMOND GROWTH OCCURS ON THE UNCOVERED PORTION OF SAID DIAMOND, AND (C) REDUCING THE TEMPERATURE AND PRESSURE AND RECOVERING SAID DIAMOND WITH A PREDETERMINED PATTERN OF GROWTH THEREON SUBSTANTIALLY CORRESPONDING TO SAID UNCOVERED PORTION.
Claim 3
Dependent Claim
28 words
AS AN ARTICLE OF MANUFACTURE, A DIAMOND CRTSTAL HAVING ON AT LEAST ONE SURFACE THEREOF AT LEAST ONE ELECTRICALLY ISOLATED REGION OF SEMI-CONDUCTING DIAMOND IN A PRESELECTED CONFIGURATION.
Claim 4
Dependent Claim
28 words
AS AN ARTICLE OF MANUFACTURE, A DIAMOND CRTSTAL HAVING ON AT LEAST ONE SURFACE THEREOF AT LEAST ONE ELECTRICALLY ISOLATED REGION OF SEMI-CONDUCTING DIAMOND IN A PRESELECTED CONFIGURATION.
References Cited (Backward Citations)
US3148161A
Cited
US3142595A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-06 | 1970-08-08 | 1971-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-06 | 1974-08-08 | 1975-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-06 | 1978-08-08 | 1979-02-07 | $7700.00 | Window Closed / Lapsed |