Method of bonding

Abstract

Abstract 1,035,595. Soldering. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 15, 1965 [June 26, 1964], No. 25182/65. Heading B3R. [Also in Division H1] To bond a wire to a terminal (alloyed electrode) of a semi-conductor device, its end is positioned against the terminal with the aid of the pointed tip of a carbon rod and an electrical pulse is passed through the rod and wire to form the bond without adversely affecting the semi-conductor device. The semi-conductor device may have two or four zones of opposite conductivity type and may be made of silicon or of silicon-germanium alloy, but as described is a germanium PNP transistor. The collector region of the transistor is bonded to a header using a lead-gold alloy. The upper surface of the wafer bears a lead-indium emitter pellet surrounded by a lead-antimony base ring. Emitter and base contact posts pass through insulation in the header. The leads on the header are pushed into a hand-held holder which makes electrical contact to the emitter and base posts. Wires are attached to the upper parts of the posts and terminate close to the emitter and base electrodes. A hand-held pointed carbon rod is used to push a wire into contact with its associated electrode and a current pulse passed from a capacitor, one side of which is connected to the carbon rod by a foot-operated switch and the other side of which is connected to the wire through the transistor holder. The wires are of gold-plated copper, silver-plated copper, or solid gold.

Inventors

• 👤 Ronald W Bowers

Bibliographic Details