Tunnel diode memory

Claim 1

A TUNNEL DIODE MEMORY SYSTEM COMPRISING: A MEMORY MATRIX INCLUDING A PLURALITY OF DIGIT PLANES; A PLURALITY OF TUNNEL DIODE MEMORY CELLS IN EACH OF SAID DIGIT PLANES, SAID MEMORY CELLS COMPRISING A BALANCED CIRCUIT ARRANGEMENT INCLUDING A TUNNEL DIODE, A RESISTOR CONNECTED IN SERIES WITH SAID TUNNEL DIODE TO PROVIDE STABLE HIGH AND LOW CURRENT STATES REPRESENTING BINARY SIGNALS 0 AND 1 AND A RESISTOR CONNECTED IN PARALLEL WITH SAID TUNNEL DIODE AND SERIES RESISTOR TO PROVIDE PARALLEL CIRCUIT PATHS; DIFFERENTIATING CIRCUIT MEANS CONNECTED TO SAID PARALLEL PATHS OF THE MEMORY CELLS IN RESPECTIVE DIGIT PLANES FOR DETECTING SWITCHING OF SAID TUNNEL DIODES FROM ONE STABLE STATE TO THE OTHER STABLE STATE IN RESPONSE TO READ-VOLTAGE PULSES BY THE CHANGE IN CURRENT IN ONE OF THE PARALLEL CIRCUIT PATHS INCLUDING SAID TUNNEL DIODE; SELECTIVE CIRCUIT MEANS FOR SUPPLYING READ-WRITE VOLTAGE PULSES TO ANY ONE WORD GROUP OF MEMORY CELLS IN SEPARATE DIGIT PLANES FOR CHANGING THE STATE OF SAID MEMORY CELLS TO READOUT AND STORE WORDS OF DIGITAL DATA IN SAID MEMORY MATRIX, SAID SELECTIVE CIRCUIT MEANS COMPRISING AN ARRAY OF LINEAR TRANSFORMERS HAVING PRIMARY WINDINGS AND SECONDARY WINDINGS AND TUNNEL RECTIFIERS CONNECTED IN SERIES WITH SAID PRIMARY WINDINGS, DRIVE LINES CONNECTED TO SAID PRIMARY WINDINGS AND TUNNEL RECTIFIERS FOR SUPPLYING A FORWARD VOLTAGE ACROSS SAID PRIMARY WINDINGS AND TUNNEL RECTIFIERS AND A DRIVE VOLTAGE PULSE ACROSS ANY SELECTED ONE OF SAID PRIMARY WINDINGS BY CONCURRENT VOLTAGE PULSES APPLIED TO A SELECTED PAIR OF SAID DRIVE LINES, EACH OF SAID DRIVE LINES BEING CONNECTED TO A PLURALITY OF SAID PRIMARY WINDINGS AND ANY SELECTED PAIR OF DRIVE LINES BEING CONNECTED ACROSS A SINGLE PRIMARY WINDING AND TUNNEL RECTIFIER FOR PRODUCING A CURRENT IN SAID SINGLE PRIMARY WINDING IN RESPONSE TO SAID DRIVE VOLTAGE PULSE FOR INDUCING A READ-VOLTAGE PULSE ACROSS THE RESPECTIVE SECONDARY WINDING AND A WRITE-VOLTAGE PULSE DURING THE RECOVERY OF SAID TRANSFORMER FOLLOWING SAID READ-VOLTAGE PULSE; AND WORD LINES INDIVIDUALLY COUPLING THE SECONDARY WINDINGS OF SAID TRANSFORMERS TO THE MEMORY CELLS OF RESPECTIVE WORD GROUPS FOR APPLYING SAID READ AND WRITE-VOLTAGE PULSES TO THE MEMORY CELLS OF ANY SELECTED ONE OF SAID RESPECTIVE WORD GROUPS FOR READOUT AND STORAGE OF WORDS OF DIGITAL DATA IN SAID MEMORY SYSTEM.