Field-effect transistor with reduced capacitance between gate and channel

Claim 1

A FIELD-EFFECT TRANSISTOR COMPRISING A BODY OF SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE AND HAVING A SUBSTANTIALLY PLANAR EXTERNAL SURFACE, A CHANNEL IN SAID BODY EXTENDING ENTIRELY ADJACENT AND SUBSTANTIALLY PARALLEL TO SAID SURFACE, A SOURCE OHMIC ELECTRODE ADJACENT SAID SURFACE CONNECTED TO ONE END OF SAID CHANNEL, A DRAIN OHMIC ELECTRODE ADJACENT SAID SURFACE CONNECTED TO THE OTHER END OF SAID CHANNEL, SAID SOURCE AND DRAIN ELECTRODES DEFINING THE ENDS OF A CHARGE CARRIER PATH THROUGH SAID CHANNEL SUBSTANTIALLY PARALLEL TO SAID SURFACE, AND A SINGLE CONTINUOUS GATE ELECTRODE STRUCTURE ADJACENT SAID CHANNEL AND OPPOSITE A CONTINUOUS PORTION OF SAID CURRENT PATH, SAID GATE ELECTRODE STRUCTURE COMPRISING A REGION OF SEMICONDUCTOR MATERIAL IN SAID BODY OF CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID CHANNEL AND THE REMAINDER OF SAID BODY, AND AN OHMIC GATE CONNECTION TO SAID REGION, ONE END OF SAID REGION AND ONE END OF SAID GATE CONNECTION BEING CLOSER PHYSICALLY TO SAID SOURCE ELECTRODE THAN THE OTHER ENDS OF SAID REGION AND SAID GATE CONNECTIONS ARE TO SAID DRAIN ELECTRODE.