US3295196A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for attaching indium arsenide semiconductor to electrical leads
Assignee: Individual
•
Filing: 1964-01-30
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Granted: 1967-01-03
•
Expires: 1984-01-30
Abstract
No abstract record available.
Inventors
- 👤 Zaeschmar Guenther
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:36
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
120 words
THE METHOD FOR ATTACHING INDIUM ARSENIDE SEMICONDUCTOR TO ELECTRICAL LEADS COMPRISING: (A) PLACING A THIN INDIUM ARSENIDE SEMICONDUCTOR ON A HOT PLATE FOR HEATING THE SEMICONDUCTOR TO A TEMPERATURE BELOW ITS RECRYSTALLIZATION POINT, (B) PLACING AN ELECTRICAL LEAD IN CONTACT WITH THE SEMICONDUCTOR, (C) PLACING A FEW GRAINS OF ARSENIC TRIOXIDE IN PROXIMITY WITH THE SPOT WHERE SAID ELECTRICAL LEAD IS TO BE BONDED TO SAID SEMICONDUCTOR, (D) PLACING A SMALL CHIP OF INDIUM OVER SAID ARSENIC TRIOXIDE. (E) APPLYING HEAT DIRECTLY TO SAID INDIUM AND ARSENIC TRIOXIDE UNTIL SAID ARSENIC TRIOXIDE SUBLIMES AND SAID INDIUM FLOWS ONTO AND AMALGAMATES WITH SAID INDIUM ARSENIDE COMPLETING A STRONG MECHANICAL AND ELECTRICAL BOND UPON COOLING BETWEEN SAID ELECTRICAL LEAD AND SAID SEMICONDUCTOR.
Claim 2
Independent Claim
120 words
THE METHOD FOR ATTACHING INDIUM ARSENIDE SEMICONDUCTOR TO ELECTRICAL LEADS COMPRISING: (A) PLACING A THIN INDIUM ARSENIDE SEMICONDUCTOR ON A HOT PLATE FOR HEATING THE SEMICONDUCTOR TO A TEMPERATURE BELOW ITS RECRYSTALLIZATION POINT, (B) PLACING AN ELECTRICAL LEAD IN CONTACT WITH THE SEMICONDUCTOR, (C) PLACING A FEW GRAINS OF ARSENIC TRIOXIDE IN PROXIMITY WITH THE SPOT WHERE SAID ELECTRICAL LEAD IS TO BE BONDED TO SAID SEMICONDUCTOR, (D) PLACING A SMALL CHIP OF INDIUM OVER SAID ARSENIC TRIOXIDE. (E) APPLYING HEAT DIRECTLY TO SAID INDIUM AND ARSENIC TRIOXIDE UNTIL SAID ARSENIC TRIOXIDE SUBLIMES AND SAID INDIUM FLOWS ONTO AND AMALGAMATES WITH SAID INDIUM ARSENIDE COMPLETING A STRONG MECHANICAL AND ELECTRICAL BOND UPON COOLING BETWEEN SAID ELECTRICAL LEAD AND SAID SEMICONDUCTOR.
References Cited (Backward Citations)
US3128538A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-01-02 | 1970-07-04 | 1971-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-01-02 | 1974-07-04 | 1975-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-01-02 | 1978-07-04 | 1979-01-03 | $7700.00 | Window Closed / Lapsed |