Solid semiconductor circuit with crossing conductors

Claim 1

A SOLID SEMICONDUCTOR CIRCUIT COMPRISING A BODY OF SEMICONDUCTOR MATERIAL CONTAINING A PLURALITY OF CIRCUIT ELEMENTS INCLUDING AT LEAST ONE ACTIVE TRANSISTOR ELEMENT EXTENDING FROM ONE MAJOR SURFACE OF THE BODY AND COMPRISING ADJACENT DISH-SHAPED EMITTER AND BASE DIFFUSED REGIONS OF OPPOSITE CONDUCTIVITY TYPE FORMNG TWO P-N JUNCTIONS, SAID EMITTER REGION HAVING A RESISTIVITY LOWER THAN THAT OF SAID BASE REGION, A LAYER OF INSULATING MATERIAL ON SAID MAJOR SURFACE OF THE BODY AND PROJECTING THE UNDERLYING CIRCUIT ELEMENTS, A PLURALITY OF CONDUCTORS PROVIDED ON THE INSULATING LAYER AND PROVIDING CONNECTIONS TO AND BETWEEN THE CIRCUIT ELEMENTS THROUGH APERTURES IN THE INSULATING LAYER, AT LEAST TWO OF SAID CONDUCTORS CROSSING ONE ANOTHER, ONE OF SAID CONDUCTORS CONSTITUTING A CONTINUOUS CONDUCTOR ON THE INSULATING LAYER, THE OTHER OF SAID CONDUCTORS BEING INTERRUPTED AT SAID ONE CONDUCTOR AND BEING DIVIDED INTO TWO SPACED CONDUCTIVE PORTIONS ON THE INSULATING LAYER, AND MEANS FOR CONDUCTIVELY CONNECTING TOGETHER SAID TWO SPACED CONDUCTIVE PORTIONS, SAID MEANS INCLUDING A FIRST DIFFUSED SURFACE ZONE EXTENDING FROM SAID MAJOR SURFACE IN THE SEMICONDUCTIVE BODY UNDER THE INSULATING LAYER AT THE CROSSING AND AT THE SAME TYPE CONDUCTIVITY AS THAT OF THE MAIN UNDERLYING BODY PORTIONS AND HAVING THE SAME TYPE OF CONDUCTIVITY, CONDUCTIVITY MAGNITUDE, AND DEPTH AS THAT OF THE TRANSISTOR EMITTER DIFFUSED REGION AND HAVING BEEN MADE SIMULTANEOUSLY WITH THE LATTER, SAID MEANS FUTHER INCLUDING A SECOND DIFFUSED ZONE SURROUNDING THE FIRST DIFFUSED ZONE AND OF THE OPPOSITE CONDUCTIVITY TYPE AND HAVING THE SAME TYPE OF CONDUCTIVITY, CONDUCTIVITY MAGNITUDE, AND DEPTH AS THAT OF THE TRANSISTOR BASE DIFFUSED REGION AND HAVING BEEN MEDE SIMULTANEOUSLY WITH THE LATTER AND FORMING A FIRST P-N DISH-SHAPED JUNCTION WITH THE FIRST DIFFUSED ZONE AND A SECOND P-N DISH-SHAPED JUNCTION WITH THE MAIN UNDERLYING BODY PORTIONS, MEANS FOR SHORT-CIRCUITING ONE OF SAID FIRST AND SECOND P-N JUNCTIONS FORMED BY THE SECOND DIFFUSED ZONE, AND MEANS CONNECTING THE ADJACENT ENDS OF THE TWO SPACED CONDUCTIVE PORTIONS THROUGH THE INSULATING LAYER TO THE FIRST DIFFUSED ZONE.