US3293435A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor charge multiplying radiation detector
Assignee: General Electric Co
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Filing: 1963-02-12
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Granted: 1966-12-20
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Expires: 1983-02-12
Abstract
No abstract record available.
Inventors
- 👤 Gerald C Huth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:33
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; G; G01; G01T; G01T1/00; G01T1/16; G01T1/24; H10D; H10D99/00; H10F30/29; H10F99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
154 words
A DEVICE FOR DETECTING ENERGETIC PARTICLES COMPRISING: (A) A SEMICONDUCTOR JUNCTION OF TWO DIFFERENT CONDUCTIVITY TYPES, A FIRST CONTACT OF LARGE AREA IN CONTACT WITH SEMICONDUCTOR OF THE FIRST SAID CONDUCTIVITY TYPE, A SECOND CONTACT OF SMALL AREA IN CONTACT WITH SEMICONDUCTOR OF THE SECOND SAID CONDUCTIVITY TYPE, THE SAID JUNCTION BEING OF LARGER AREA THAN THE SAID SECOND CONTACT, THE SEMICONDUCTOR BEING BEVELED SO THAT IST CROSS SECTION AT A GIVEN DISTANCE FROM THE SAID FIRST CONTACT IS LESS THAN THEY AT ANY LESSER DISTANCE FROM THE SAID FIRST CONTACT; (B) MEANS FOR APPLYING POTENTIAL ACROSS THE SAID SEMICONDUCTOR JUNCTION BY CONNECTED TO THE TWO SAID CONTACTS, IN THE DIRECTION OF POOR CONDUCTION OF THE SAID JUNCTION, AND OF SUCH MAGNITUDE AS TO PRODUCE "AVALANCHE" MULTIPLICATION OF MINORITY CARRIERS IN THE CHARGE DEPLETION REGION OF THE SAID SEMICONDUCTOR; (C) MEANS FOR DETECTING FLOW OF CHARGES IN THE SAID SEMICONDUCTOR BETWEEN THE SAID CONTACTS.
Claim 2
Independent Claim
154 words
A DEVICE FOR DETECTING ENERGETIC PARTICLES COMPRISING: (A) A SEMICONDUCTOR JUNCTION OF TWO DIFFERENT CONDUCTIVITY TYPES, A FIRST CONTACT OF LARGE AREA IN CONTACT WITH SEMICONDUCTOR OF THE FIRST SAID CONDUCTIVITY TYPE, A SECOND CONTACT OF SMALL AREA IN CONTACT WITH SEMICONDUCTOR OF THE SECOND SAID CONDUCTIVITY TYPE, THE SAID JUNCTION BEING OF LARGER AREA THAN THE SAID SECOND CONTACT, THE SEMICONDUCTOR BEING BEVELED SO THAT IST CROSS SECTION AT A GIVEN DISTANCE FROM THE SAID FIRST CONTACT IS LESS THAN THEY AT ANY LESSER DISTANCE FROM THE SAID FIRST CONTACT; (B) MEANS FOR APPLYING POTENTIAL ACROSS THE SAID SEMICONDUCTOR JUNCTION BY CONNECTED TO THE TWO SAID CONTACTS, IN THE DIRECTION OF POOR CONDUCTION OF THE SAID JUNCTION, AND OF SUCH MAGNITUDE AS TO PRODUCE "AVALANCHE" MULTIPLICATION OF MINORITY CARRIERS IN THE CHARGE DEPLETION REGION OF THE SAID SEMICONDUCTOR; (C) MEANS FOR DETECTING FLOW OF CHARGES IN THE SAID SEMICONDUCTOR BETWEEN THE SAID CONTACTS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-19 | 1970-06-20 | 1970-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-19 | 1974-06-20 | 1974-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-19 | 1978-06-20 | 1978-12-20 | $7700.00 | Window Closed / Lapsed |