Semiconductor signal translating circuit

Claim 1

AN ELECTRICAL CIRCUIT COMPRISING: AN INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE HAVING SOURCE GATE AND DRAIN ELECTRODES FORMED ON A SUBSTRATE OF SEMICONDUCTOR MATERIUAL, AND WHICH HAS A RECTIFYING JUNCTION BETWEEN SAID SUBSTRATE AND SOURCE ELECTRODES, AN INPUT CIRCUIT INCLUDING A RESISTOR AND A CAPACITOR CONNECTED BETWEEN SAID GATE AND SORUCE ELECTRODES, MEANS INCLUDING A DIRECT CURRENT CONNECTION BETWEEN SAID GATE ELECTRODE AND SAID SEMICONDUCTOR SUBSTRATE FOR ESTABLISHING SAID SUBSTRATE AT SUBSTANTIALLY THE SAME POTENTIAL AS SAID SOURCE ELECTRODE UNDER STEADY STATE CONDITIONS WHEREBY VOLTAGE EXCURSIONS AT SAID GATE ELECTRODE IN ONE POLARITY DIRECTION ARE RECTIFIED BY THE RECTIFYING JUNCTION APPEARING BETWEEN SAID SUBSTRATE AND SOURCE ELECTRODES, AND AN OUTPUT CIRCUIT CONNECTED TO SAID DRAIN ELECTRODE.