US3289052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface barrier indium arsenide transistor
Assignee: California Institute Research Foundation
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Filing: 1963-10-14
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Granted: 1966-11-29
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Expires: 1983-10-14
Abstract
No abstract record available.
Inventors
- 👤 Carver A Mead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10D; H10D99/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
38 words
A SURFACE BARRIER ELECTRICAL TRANSLATING DEVICE COMPRISING A WAFER OF P-TYPE CONDUCTIVITY INDIUM ARSENIDE, METAL CONTACTS ON SAID WAFER, AND BIASING MEANS TO SAID METAL CONTACTS FOR PRODUCING A CURENT DENSITY SUBSTANTIALLY IN EXCESS OF 2,000 AMPS/SQUARE CENTIMETERS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-11-28 | 1970-05-30 | 1970-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-11-28 | 1974-05-30 | 1974-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-11-28 | 1978-05-30 | 1978-11-29 | $7700.00 | Window Closed / Lapsed |