Patent US2303786A successfully refreshed from Google Patents.
US3288656A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NEC Corp
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Filing: 1964-02-26
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Granted: 1966-11-29
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Expires: 1984-02-26
Abstract
No abstract record available.
Inventors
- 👤 Nakamura Tessuro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:59
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10P; H10P10/00; H10P10/12; H10P10/128; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10; H10W99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/085
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
70 words
A UNITARY STRUCTURE COMPRISING A PLURALITY OF TRANSISTORS EACH HAVING EMITTER, BASE AND COLLECTOR REGIONS, SAID COLLECTOR REGIONS INCLUDING SILICON, SAID TRANSISTORS BEING PERMANENTLY JOINED TOGETHER AT THEIR COLLECTOR REGIONS BY A BONDING LAYER FORMED FROM SILICON FROM SAID COLLECTOR REGIONS, SAID LAYER COMPRISING SILICON OXIDE AND HAVING A TEMPERATURE COEFFICIENT OF EXPANSION SUBSTANTIALLY THE SAME AS SAID COLLECTOR REGIONS, WHEREBY INTERNAL STRESSES AND CRACKING OF SAID TRANSISTORS IS ELIMINATED.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-11-28 | 1970-05-30 | 1970-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-11-28 | 1974-05-30 | 1974-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-11-28 | 1978-05-30 | 1978-11-29 | $7700.00 | Window Closed / Lapsed |