Precision solid state ratio bridge

Claim 1

A BRIDGE NETWORK INCLUDING IN COMBINATION: A FIRST NETWORK FORMING FIRST AND SECOND ARMS FOR SAID BRIDGE, A SECOND NETWORK COUPLED TO SAID FIRST NETWORK AND INCLUDING INTER-CONNECTED FIRST AND SECOND VOLTAGE-VARIABLE DIODE CAPACITORS RESPECTIVELY FORMING THIRD AND FOURTH ARMS OF THE BRIDGE, SAID VOLTAGE-VARIABLE DIODE CAPACITORS EXHIBITING CAPACITANCE CHANGES FOR CHANGES IN AMBIENT TEMPERATURE, A BIAS CIRCUIT CONNECTED TO SAID FIRST AND SECOND VOLTAGE-VARIABLE DIODE CAPACITORS FOR ESTABLISHING AND DIODE CAPACITORS INDIVIDUALLY AT PARTICULAR BIAS LEVELS, A CONTROL CIRCUIT CONNECTED TO SAID SECOND NETWORK FOR INTRODUCING A DIRECT CURRENT SIGNAL TO THE COMMON JUNCTION OF SAID INTER-CONNECTED DIODE CAPACITORS TO INCREASE THE CAPACITANCE OF ONE OF SAID DIODE CAPACITORS AND TO DECREASE THE CAPACITANCE OF THE OTHER OF SAID DIODE CAPACITORS SO AS TO CONTROL THE CAPACITANCE RATIO THEREOF AS AN ESSENTIALLY LINEAR FUNCTION OF THE DIRECT CURRENT SIGNAL, AND A PAIR OF TEMPERATURE COMPENSATING DIODES INCLUDED IN SAID BIAS CIRCUIT AND RESPECTIVELY CONNECTED IN CIRCUIT WITH RESPECTIVE ONES OF SAID VOLTAGEVARIABLE DIODE CAPACITORS AND EXHIBITING CORRESPONDING VARIATIONS IN IMPEDANCE FOR CHANGES IN AMBIENT TEMPERATURE TO VARY THE INDIVIDUAL BIASES ON SAID VOLTAGE-VARIABLE DIODE CAPACITORS FOR SUCH CHANGES IN AMBIENT TEMPERATURE.