US3282749A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of controlling diffusion
Assignee: General Electric Co
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Filing: 1964-03-26
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Granted: 1966-11-01
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Expires: 1984-03-26
Abstract
No abstract record available.
Inventors
- 👤 Henry H Woodbury
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:10
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; Y; Y10; Y10S; Y10S438/00; Y10S438/909; Y10S438/971
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
175 words
A METHOD OF CONTROLLING THE RATE OF DIFFUSION OF AN IMPURITY IN A SEMICONDUCTIVE COMPOUND HAVING A FIRST COMPONENT SELECTED FROM THE GROUP CONSISTING OF ZINC AND CADMIUM AND A SECOND COMPONENT SELECTED FROM THE GROUP CONSISTING OF SULFUR, SELENIUM AND TELLURIUM WHICH COMPRISES THE STEPS OF PREPARING A CRYSTAL OF SAID COMPOUND, PLACING SAID CRYSTAL AND A QUANTITY OF SAID IMPURITY IN A FURNACE, HEATING SAID CRYSTAL AND SAID IMPURITY TO AN ELEVATED TEMPERATURE, PROVIDING AN ATMOSPHERE IN SAID SURFACE INCLUDING FIRST PREDETERMINED PARTIAL PRESSURES OF THE RESPECTIVE ELEMENTS OF SAID COMPOUND, SAID PARTIAL PRESSURES EACH LYING BETWEEN ZERO AND THE SATURATION VALUE AT SAID ELEVATED TEMPERATURE, SO AS TO PROVIDE A PREDETERMINED RATE OF DIFFUSION OF SAID IMPURITY, AND MAINTAINING SAID CRYSTAL, SAID IMPURITY AND SAID ATMOSPHERE AT SAID ELEVATED TEMPERATURE FOR A TIME SUFFICIENT TO DIFFUSE A PORTION OF SAID IMPURITY A PREDETERMINED DEPTH INTO SAID CRYSTAL AND CHANGING SAID ATMOSPHERE TO PROVIDE SECOND PREDETERMINED PARTIAL PRESSURES OF THE RESPECTIVE ELEMENTS OF SAID COMPOUND SO AS TO CHANGE SAID RATE OF DIFFUSION.
Claim 2
Independent Claim
175 words
A METHOD OF CONTROLLING THE RATE OF DIFFUSION OF AN IMPURITY IN A SEMICONDUCTIVE COMPOUND HAVING A FIRST COMPONENT SELECTED FROM THE GROUP CONSISTING OF ZINC AND CADMIUM AND A SECOND COMPONENT SELECTED FROM THE GROUP CONSISTING OF SULFUR, SELENIUM AND TELLURIUM WHICH COMPRISES THE STEPS OF PREPARING A CRYSTAL OF SAID COMPOUND, PLACING SAID CRYSTAL AND A QUANTITY OF SAID IMPURITY IN A FURNACE, HEATING SAID CRYSTAL AND SAID IMPURITY TO AN ELEVATED TEMPERATURE, PROVIDING AN ATMOSPHERE IN SAID SURFACE INCLUDING FIRST PREDETERMINED PARTIAL PRESSURES OF THE RESPECTIVE ELEMENTS OF SAID COMPOUND, SAID PARTIAL PRESSURES EACH LYING BETWEEN ZERO AND THE SATURATION VALUE AT SAID ELEVATED TEMPERATURE, SO AS TO PROVIDE A PREDETERMINED RATE OF DIFFUSION OF SAID IMPURITY, AND MAINTAINING SAID CRYSTAL, SAID IMPURITY AND SAID ATMOSPHERE AT SAID ELEVATED TEMPERATURE FOR A TIME SUFFICIENT TO DIFFUSE A PORTION OF SAID IMPURITY A PREDETERMINED DEPTH INTO SAID CRYSTAL AND CHANGING SAID ATMOSPHERE TO PROVIDE SECOND PREDETERMINED PARTIAL PRESSURES OF THE RESPECTIVE ELEMENTS OF SAID COMPOUND SO AS TO CHANGE SAID RATE OF DIFFUSION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-10-31 | 1970-05-02 | 1970-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-10-31 | 1974-05-02 | 1974-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-10-31 | 1978-05-02 | 1978-11-01 | $7700.00 | Window Closed / Lapsed |