Insulated-gate field-effect transistor oscillator circuits

Claim 1

A FREQUENCY CONVERTER CIRCUIT COMPRISING: AN INSTALLED-GATE FIELD-EFFECT TRANSISTOR HAVING SOURCE, DRAIN AND GATE ELECTRODES, A FIRST CIRCUIT INTERCONNECTING SAID GATE AND SOURCE ELECTRODES, A SECOND CIRCUIT INTERCONNECTING SAID DRAIN AND SOURCE ELECTRODES, ONE OF SAID FIRST AND SECOND CIRCUITS INCLUDING A CIRCUIT RESONANT TO A LOCAL OSCILLATION FREQUENCY, SAID FIRST AND SECOND CIRCUITS BEING COUPLED FOR FEEDBACK OF OSCILLATIONS WHEREBY OSCILLATIONS ARE PRODUCED IN SAID FREQUENCY CONVERTER CIRCUIT AT SAID LOCAL OSCILLATION FREQUENCY, MEANS FOR APPLYING AN INPUT WAVE BETWEEN SAID GATE AND SOURCE ELECTRODES, MEANS RESONANT TO A WAVE OF THE FREQUENCY OF THE BEAT WAVE BETWEEN THE LOCALLY PRODUCED OSCILLATIONS AND THE INPUT WAVE COUPLED BETWEEN SAID DRAIN ELECTRODE AND SAID SOURCE ELECTRODE, AND MEANS FOR ESTABLISHING A PREDETERMIND AMPLITUDE OF OSCILLATIONS IN SAID FREQUENCY CONVERTER CIRCUIT COMPRISING A CONNECTION FOR APPLYING A BIASING POTENTIA TO SAID GATE ELECTRODE WITH RESPECT TO SAID SOURCE ELECTRODE SUCH THAT THE TRANSISTOR EXHIBITS SUFFICIENT GAIN AT SAID GATE ELECTRODE TO SOURCE ELECTRODE BIASING POTENTIAL TO INITIATE AND SUSTAIN OSCILLATIONS AT SAID PREDETERMINED AMPLITUDE AND SUCH THAT SAID TRANSISTOR OPERATES ALONG A NONLINEAR PORTION OF ITS TRANSFER CHARACTISTIC.