Patent EP0139433A1 successfully refreshed from Google Patents.
US3281291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device fabrication
Assignee: RCA Corp
•
Filing: 1963-08-30
•
Granted: 1966-10-25
•
Expires: 1983-08-30
Abstract
No abstract record available.
Inventors
- 👤 Leon S Greenberg
- 👤 William J Greig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C30; C30B; C30B31/00; C30B31/02; H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/062; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
151 words
THE METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION DEVICE, COMPRISING THE STEPS OF: PREPARING A GIVEN CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE WAFER WITH TWO OPPOSING MAJOR FACES; DEPOSITING A SILICON OXIDE LAYER ON EACH SAID MAJOR WAFER FACE, EACH SAID SILICON OXIDE LAYER CONTAINING AN OPPOSITE CONDUCTIVELY TYPE MODIFIER, THE CONCENTRATION OF SAID MODIFIER IN ONE SAID SILICON OXIDE LAYER BEING HIGHER THAN IN THE OTHER SAID LAYER; AND HEATING SAID WAFER TO DIFFUSE SAID MODIFIER FROM SAID SILICON OXIDE LAYERS ONLY INTO THE PORTIONS OF SAID WAFER IMMEDIATELY ADJACENT SAID SILICON OXIDE LAYERS AND FORM TWO OPPOSITE CONDUCTIVITY TYPE WAFER REGIONS ADJACENT SAID TWO OPPOSING MAJOR FACES, THE CONDUCTIVITY OF THE OPPOSITE TYPE WAFER REGION IMMEDIATELY ADJACENT THE SILICON OXIDE LAYER WITH SAID HIGHER CONCENTRATION OF SAID OPPOSITE CONDUCTIVITYTYPE MODIFIER FALLING OFF MORE RAPIDLY WITH INCREASING DEPTH THAN THE CONDUCTIVITY OF THE OPPOSITE TYPE WAFER REGION IMMEDIATELY ADJACENT THE OPPOSING WAFER FACE.
Claim 2
Independent Claim
151 words
THE METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION DEVICE, COMPRISING THE STEPS OF: PREPARING A GIVEN CONDUCTIVITY TYPE CRYSTALLINE SEMICONDUCTIVE WAFER WITH TWO OPPOSING MAJOR FACES; DEPOSITING A SILICON OXIDE LAYER ON EACH SAID MAJOR WAFER FACE, EACH SAID SILICON OXIDE LAYER CONTAINING AN OPPOSITE CONDUCTIVELY TYPE MODIFIER, THE CONCENTRATION OF SAID MODIFIER IN ONE SAID SILICON OXIDE LAYER BEING HIGHER THAN IN THE OTHER SAID LAYER; AND HEATING SAID WAFER TO DIFFUSE SAID MODIFIER FROM SAID SILICON OXIDE LAYERS ONLY INTO THE PORTIONS OF SAID WAFER IMMEDIATELY ADJACENT SAID SILICON OXIDE LAYERS AND FORM TWO OPPOSITE CONDUCTIVITY TYPE WAFER REGIONS ADJACENT SAID TWO OPPOSING MAJOR FACES, THE CONDUCTIVITY OF THE OPPOSITE TYPE WAFER REGION IMMEDIATELY ADJACENT THE SILICON OXIDE LAYER WITH SAID HIGHER CONCENTRATION OF SAID OPPOSITE CONDUCTIVITYTYPE MODIFIER FALLING OFF MORE RAPIDLY WITH INCREASING DEPTH THAN THE CONDUCTIVITY OF THE OPPOSITE TYPE WAFER REGION IMMEDIATELY ADJACENT THE OPPOSING WAFER FACE.
References Cited (Backward Citations)
US2802760A
Cited
US3084079A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-10-24 | 1970-04-25 | 1970-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-10-24 | 1974-04-25 | 1974-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-10-24 | 1978-04-25 | 1978-10-25 | $7700.00 | Window Closed / Lapsed |