US3279946A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hydrogen chloride treatment of semiconductor coating chamber
Assignee: Merck and Co Inc
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Filing: 1962-08-14
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Granted: 1966-10-18
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Expires: 1982-08-14
Abstract
No abstract record available.
Inventors
- 👤 Edward C Schaarschmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/564; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S148/00; Y10S148/017; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
51 words
IN A VAPOR DEPOSITION PROCESS FOR PREPARING HIGH RESISTIVITY N-TYPE SEMICONDUCTOR MATERIALS FROM THE VAPOR PHASE WITHIN A REACTOR CHAMBER, THE STEP OF PRECONDITIONING SAID REACTOR CHAMBER BY HEATING THE CHAMBER WALLS WITHIN THE TEMPERATURE RANGE OF 450-1000*C. IN THE PRESENCE OF A STREAM OF A REACTANT GAS OF HYDROGEN CHLORIDE.
Claim 2
Dependent Claim
51 words
IN A VAPOR DEPOSITION PROCESS FOR PREPARING HIGH RESISTIVITY N-TYPE SEMICONDUCTOR MATERIALS FROM THE VAPOR PHASE WITHIN A REACTOR CHAMBER, THE STEP OF PRECONDITIONING SAID REACTOR CHAMBER BY HEATING THE CHAMBER WALLS WITHIN THE TEMPERATURE RANGE OF 450-1000*C. IN THE PRESENCE OF A STREAM OF A REACTANT GAS OF HYDROGEN CHLORIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-10-17 | 1970-04-18 | 1970-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-10-17 | 1974-04-18 | 1974-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-10-17 | 1978-04-18 | 1978-10-18 | $7700.00 | Window Closed / Lapsed |