US3275482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor p-n junction device and method of its manufacture
Assignee: Siemens and Halske AG
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Filing: 1964-09-23
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Granted: 1966-09-27
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Expires: 1984-09-23
Abstract
No abstract record available.
Inventors
- 👤 Meer Winfried
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:16
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00; H10P95/50; H10W; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/5363; H10W72/59; H10W72/921; H10W72/926
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
122 words
THE METHOD OF PRODUCING A SEMICONDUCTOR P-N JUNCTION DEVICE, WHICH COMPRISES DEPOSITING A BARRIER-FREE METAL COATING UPON THE SURFACE OF A SEMICONDUCTOR BODY HAVING ONE CONDUCTANCE TYPE AT SAID COATING, PLACING A METAL PELLET CONTAINING DOPANT FOR PRODUCING THE OTHER CONDUCTANCE TYPE N SAID BODY UPON THE BODY, THE PELLET CONTACTING THE COATING AT LEAST AT THE PELLET MARGIN, HEATING THE BODY AND PELLET TO ALLOYING TEMPERATURE AND THEREBY ALLOYING THE PELLET THROUGH SAID COATING WITH SAID BODY TO PRODUCE AN ALLOY-DOPED RECRYSTALLIZATION ZONE OF THE OTHER CONDUCTANCE TYPE BETWEEN SAID PELLET AND SAID BODY WHEREBY A P-N JUNCTION IS FORMED AND A GROOVE AROUND SAID PELLET IS FORMED IN SAID COATING IN WHICH GROOVE SAID P-N JUNCTION EMERGES AT THE SURFACE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-26 | 1970-03-28 | 1970-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-26 | 1974-03-28 | 1974-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-26 | 1978-03-28 | 1978-09-27 | $7700.00 | Window Closed / Lapsed |