Glass-encased semiconductor

Claim 1

A SEMICONDUCTOR DEVICE COMPRISING A WAFER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL HAVING REGIONS OF OPPOSITE CONDUCTIVITY TYPES THEREIN, A HARD GLASS, CUP-LIKE SHELL COMPOSED OF A GLASS HAVING A GIVEN THERMAL EXPANSION COEFFICIENT AND A GIVEN SOFTENING POINT, A FIRST CONDUCTIVE MEMBER EXTENDING THROUGH A NOTCH IN THE VERTICAL WALL OF SAID SHELL INTO THE INTERIOR OF SAID SHELL, SAID WAFER BEING POSITIONED ON SAID FIRST CONDUCTIVE MEMBER WITHIN SAID SHELL TO PROVIDE ELECTRICAL CONTACT TO SAID WAFER IN A REGION OF ONE CONDUCTIVITY TYPE, A SECOND CONDUCTIVE MEMBER EXTENDING THROUGH A SECOND NOTCH IN THE VERTICAL WALL OF SAID SHELL INTO THE INTERIOR OF SAID SHELL, A THIN CONDUCTIVE LEAD CONNECTING A REGION OF SAID WAFER AT THE OPPOSITE CONDUCTIVITY TYPE TO SAID SECOND CONDUCTIVE MEMBER WITHIN THE SHELL, AND A CASING OF SOLDER GLASS FILLING SAID SHELL AND SURROUNDING SAID WAFER AND THE PORTIONS OF SAID CONDUCTIVE MEMBERS WHICH ARE WITHIN THE SHELL, SAID CASING BEING COMPOSED OF A FUSED GLASS POWDER HAVING A SOFTENING POINT MUCH LOWER THAN THAT OF SAID SHELL AND HAVING A THERMAL EXPANSION COEFFICIENT SUBSTANTIALLY EQUAL TO THAT OF SAID SHELL.