US3267340A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave semi-conductor device
Assignee: Lignes Telegraphiques et Telephoniques LTT SA
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Filing: 1961-05-25
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Granted: 1966-08-16
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Expires: 1981-05-25
Abstract
No abstract record available.
Inventors
- 👤 Andre J Regeffe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:22
CPC Classifications
H; H03; H03D; H03D9/00; H03D9/02; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
165 words
A HIGH BURN-OUT SOLID STATE MICROWAVE DEVICE COMPRISING: (A) A WAFER OF SEMICONDUCTOR MATERIAL HAVING A FIRST REGION OF A FIRST CONDUCTIVITY TYPE, A SECOND REGION OF A SECOND CONDUCTIVITY TYPE FORMING A RELATIVELY LARGE AREA JUNCTION WITH SAID FIRST REGION A THIRD REGION OF SAID FIRST CONDUCTIVITY TYPE FORMING A RELATIVELY SMALL AREA JUNCTION WITH SAID SECOND REGION; (B) A FIRST CONDUCTIVE MEMBER; (C) A SECOND CONDUCTIVE MEMBER; (D) FIRST MEANS FOR INTERCONNECTING SAID FIRST CONDUCTIVE MEMBER AND SAID THIRD REGION OF SAID WAFER; (E) SECOND MEANS FOR INTERCONNECTING SAID FIRST CONDUCTIVE MEMBER AND SAID SECOND REGION OF SAID WAFER, SAID SECOND MEANS BEING IN RECTIFYING CONTACT WITH SAID SECOND REGION OF SAID WAFER; AND (F) BRIDGE MEANS CONNECTED TO SAID SECOND CONDUCTIVE MEMBER AND TO SAID FIRST AND SECOND REGIONS OF SAID WAFER FOR FORMING A DOUBLE ZENER DIODE WITH SAID WAFER AND SAID FIRST INTERCONNECTION MEANS AND A MICROWAVE DIODE WITH SAID SECOND INTERCONNECTION MEANS AND SAID SECOND REGION OF SAID WAFER.
Claim 2
Dependent Claim
165 words
A HIGH BURN-OUT SOLID STATE MICROWAVE DEVICE COMPRISING: (A) A WAFER OF SEMICONDUCTOR MATERIAL HAVING A FIRST REGION OF A FIRST CONDUCTIVITY TYPE, A SECOND REGION OF A SECOND CONDUCTIVITY TYPE FORMING A RELATIVELY LARGE AREA JUNCTION WITH SAID FIRST REGION A THIRD REGION OF SAID FIRST CONDUCTIVITY TYPE FORMING A RELATIVELY SMALL AREA JUNCTION WITH SAID SECOND REGION; (B) A FIRST CONDUCTIVE MEMBER; (C) A SECOND CONDUCTIVE MEMBER; (D) FIRST MEANS FOR INTERCONNECTING SAID FIRST CONDUCTIVE MEMBER AND SAID THIRD REGION OF SAID WAFER; (E) SECOND MEANS FOR INTERCONNECTING SAID FIRST CONDUCTIVE MEMBER AND SAID SECOND REGION OF SAID WAFER, SAID SECOND MEANS BEING IN RECTIFYING CONTACT WITH SAID SECOND REGION OF SAID WAFER; AND (F) BRIDGE MEANS CONNECTED TO SAID SECOND CONDUCTIVE MEMBER AND TO SAID FIRST AND SECOND REGIONS OF SAID WAFER FOR FORMING A DOUBLE ZENER DIODE WITH SAID WAFER AND SAID FIRST INTERCONNECTION MEANS AND A MICROWAVE DIODE WITH SAID SECOND INTERCONNECTION MEANS AND SAID SECOND REGION OF SAID WAFER.
References Cited (Backward Citations)
US2889499A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-15 | 1970-02-14 | 1970-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-15 | 1974-02-14 | 1974-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-15 | 1978-02-14 | 1978-08-16 | $7700.00 | Window Closed / Lapsed |