Semiconductor amplifying radiation detector

Claim 1

IN RADIATION SENSITIVE MEANS, A BODY OF INTRINSIC SEMICONDUCTOR MEANS OF LOW CONDUCTIVITY AND IN WHICH THE DRIFT MOBILITY OF ELECTRONS AND HOLES VARIES WIDELY AND ONE GREATLY EXCEEDS THE OTHER, SAID BODY HAVING OPPOSED FLAT SURFACES, A FIRST DIFFUSED IMPURITY AREA ON ONE OF THE FLAT SURFACES PROVIDING A THIN LAYER OF HIGH ELECTRICAL CONDUCTIVITY, A SECOND DIFFUSED IMPURITY AREA ON THE OPPOSITE FACE OF THE SEMICONDUCTIVE MEANS FORMING A RECTIFYING CONTACT WITH SAID OPPOSITE FACE AND ACTING AS A GATING ELECTRODE, A PLURALITY OF SPACED OHMIC CONTACTS APPLIED TO THE FIRST DIFFUSED AREA SO THAT THE THIN LAYER OF HIGH ELECTRICAL CONDUCTIVITY MAY BE CONNECTED INTO AN ELECTRIC CIRCUIT AND HAVE CURRENT FLOW THERETHROUGH, A FIRST SOURCE OF ELECTRICAL POWER CONNECTED ACROSS THE FIRST AND SECOND DIFFUSED AREAS TO DEVELOP A FIELD ACROSS THE TWO, A SECOND SOURCE OF ELECTRICAL POWER CONNECTED ACROSS THE OHMIC CONTACTS TO PRODUCE CURRENT FLOW THROUGH SAID THIN LAYER SO THAT INCIDENT RADIATION ON THE EDGES OF SAID SEMICONDUCTIVE BODY BETWEEN THE FIRST AND SECOND DIFFUSED AREAS WILL PRODUCE A PULSE IN THE CURRENT FLOWING THROUGH THE THIN LAYER DUE TO THE WIDE DIFFERENTIAL IN DRIFT MOBILITY OF ELECTRONS AND HOLES AND INDICATE THE PRESENCE OF RADIATION.