US3265528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming metal carbide coating on carbon base
Assignee: AT&T Inc
•
Filing: 1963-03-27
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Granted: 1966-08-09
•
Expires: 1983-03-27
Abstract
No abstract record available.
Inventors
- 👤 Walter L Bond
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:50
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C01; C01B; C01B33/00; C01B33/02; C04B41/45; C04B41/50; C04B41/5053; C04B41/5057; C04B41/5059; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/243; F; F27; F27B; F27B14/00; F27B14/08; F27B14/10; F27D; F27D1/00; F27D1/16; F27D1/1678; F27D1/1684; C04B2111/00; C04B2111/00474; C04B2111/00948; Y; Y10; Y10S; Y10S117/00; Y10S117/90
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
184 words
A METHOD FOR MAKING A CARBON CONTAINER SUBSTANTIALLY INERT TO MOLTEN SILICON COMPRISING THE STEPS OF FORMING A MIXTURE IN SAID CONTAINER OF SILCON AND AT LEAST ONE METAL SELECTED FROM THE GROUP CONSISTING OF TANTALUM, NIOBIUM, TUNGSTEN, HAFNIUM, MOLYBDENUM AND VANADIUM, SAID METAL BEING PRESENT IN AN AMOUNT SUFFICIENT TO FORM WITH THE CARBON A METAL CARBIDE FILM AT LEAST 0.1 MIL THICK ON THE INTERIOR CONTAINER SURFACE AND SAID SILICON BEING PRESENT IN AN AMOUNT BY WEIGHT OF FROM ONE-QUART TO TEN TIMES THE AMOUNT OF METAL PRESENT AND SUBJECTING SAID CONTAINER TO A HEATING SCHEDULE IN AN INERT ATMOSPHERE THAT MELTS AND REACTS THE MIXTURE WITH THE CARBON SURFACE TO FORM A METAL CARBIDE FILM AND REMOVES THE SILICON BY VOLTALIZATION, THE MAXIMUM TEMPERATURE OF SAID SCHEDULE FOR FORMING THE METAL CARBIDE FILM BEING IN THE ORDER OF 3000*C. AT TEMPERATURE OF SAID SCHEDULE FOR VOLATILIZING THE UUM OF 10-4 TO 10-6 MILLIMETERS OF MERCURY AND THE MAXIMUM TEMPRATURE OF SAID SCHEDULE FOR VOLATILIZING THE SILICON BEING IN THE ORDER OF 200*C. BELOW THE BOILING POINT OF THE METAL CARBIDE FILM.
Claim 2
Independent Claim
184 words
A METHOD FOR MAKING A CARBON CONTAINER SUBSTANTIALLY INERT TO MOLTEN SILICON COMPRISING THE STEPS OF FORMING A MIXTURE IN SAID CONTAINER OF SILCON AND AT LEAST ONE METAL SELECTED FROM THE GROUP CONSISTING OF TANTALUM, NIOBIUM, TUNGSTEN, HAFNIUM, MOLYBDENUM AND VANADIUM, SAID METAL BEING PRESENT IN AN AMOUNT SUFFICIENT TO FORM WITH THE CARBON A METAL CARBIDE FILM AT LEAST 0.1 MIL THICK ON THE INTERIOR CONTAINER SURFACE AND SAID SILICON BEING PRESENT IN AN AMOUNT BY WEIGHT OF FROM ONE-QUART TO TEN TIMES THE AMOUNT OF METAL PRESENT AND SUBJECTING SAID CONTAINER TO A HEATING SCHEDULE IN AN INERT ATMOSPHERE THAT MELTS AND REACTS THE MIXTURE WITH THE CARBON SURFACE TO FORM A METAL CARBIDE FILM AND REMOVES THE SILICON BY VOLTALIZATION, THE MAXIMUM TEMPERATURE OF SAID SCHEDULE FOR FORMING THE METAL CARBIDE FILM BEING IN THE ORDER OF 3000*C. AT TEMPERATURE OF SAID SCHEDULE FOR VOLATILIZING THE UUM OF 10-4 TO 10-6 MILLIMETERS OF MERCURY AND THE MAXIMUM TEMPRATURE OF SAID SCHEDULE FOR VOLATILIZING THE SILICON BEING IN THE ORDER OF 200*C. BELOW THE BOILING POINT OF THE METAL CARBIDE FILM.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-08 | 1970-02-07 | 1970-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-08 | 1974-02-07 | 1974-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-08 | 1978-02-07 | 1978-08-09 | $7700.00 | Window Closed / Lapsed |