US3264712A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: NEC Corp
•
Filing: 1963-05-28
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Granted: 1966-08-09
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Expires: 1983-05-28
Abstract
No abstract record available.
Inventors
- 👤 Hayashi Teruo
- 👤 Tsuji Shigeru
- 👤 Anazawa Shinzo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:26
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
182 words
A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES COMPRSING THE STEPS OF (A) FORMING IN A FLAT PIECE OF CONDUCTIVE MATERIAL AN OPENING HAVING INWARDLY PROJECTING EXTENSIONS, (B) ATTACHING A SEMICONDUCTOR ELEMENT BETWEEN SAID INWARDLY PROJECTING EXTENSIONS IN SUCH MANNER THAT THE INWARDLY PROJECTING EXTENSIONS FROM LEAD ELEMENTS FOR SAID SEMICONDUCTOR DEVICE, (C) ENCAPSULATING SAID SEMICONDUCTOR ELEMENT AND THE INNERMOST PORTIONS OF SAID INWARDLY PROJECTING EXTENSIONS WITH AN ENCAPSULATING MATERIAL CONTAINING POWDERED GLASS HAVING A MELTING TEMPERATURE BELOW 500* C., SAID ENCAPSULATING STEP COMPRISING APPLYING A COATING OF SAID ENCAPSULATING MATERIAL TO SAID SEMICONDUCTOR ELEMENT AND THE INNERMOST PORTIONS OF SAID INWARDLY PROJECTING EXTENSIONS, THEN HEATING THE COATED SEMICONDUCTOR ELEMENT TO A TEMPERATURE BETWEEN 500* C. AND SAID MELTING TEMPERATURE TO MELT SAID POWDERED GLASS, AND THEN COOLING THE SEMICONDUCTOR ELEMENT TO SOLIDIFY SAID MELTED GLASS AND THUS ENCAPSULATE SAID SEMICONDUCTOR ELEMENT IN A GLASS ENVELOPE, AND (D) CUTTING SAID INWARDLY PROJECTING EXTENSIONS FREE OF SAID PIECE OF CONDUCTIVE MATERIAL TO FORM AN ENCAPSULATED SEMICONDUCTOR DEVICE, WHEREIN SAID EXTENSIONS PROTRUDE OUTWARDLY FROM SAID GLASS ENVELOPE AND SERVE AS SAID LEAD ELEMENTS FOR SAID DEVICE.
Claim 2
Independent Claim
182 words
A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES COMPRSING THE STEPS OF (A) FORMING IN A FLAT PIECE OF CONDUCTIVE MATERIAL AN OPENING HAVING INWARDLY PROJECTING EXTENSIONS, (B) ATTACHING A SEMICONDUCTOR ELEMENT BETWEEN SAID INWARDLY PROJECTING EXTENSIONS IN SUCH MANNER THAT THE INWARDLY PROJECTING EXTENSIONS FROM LEAD ELEMENTS FOR SAID SEMICONDUCTOR DEVICE, (C) ENCAPSULATING SAID SEMICONDUCTOR ELEMENT AND THE INNERMOST PORTIONS OF SAID INWARDLY PROJECTING EXTENSIONS WITH AN ENCAPSULATING MATERIAL CONTAINING POWDERED GLASS HAVING A MELTING TEMPERATURE BELOW 500* C., SAID ENCAPSULATING STEP COMPRISING APPLYING A COATING OF SAID ENCAPSULATING MATERIAL TO SAID SEMICONDUCTOR ELEMENT AND THE INNERMOST PORTIONS OF SAID INWARDLY PROJECTING EXTENSIONS, THEN HEATING THE COATED SEMICONDUCTOR ELEMENT TO A TEMPERATURE BETWEEN 500* C. AND SAID MELTING TEMPERATURE TO MELT SAID POWDERED GLASS, AND THEN COOLING THE SEMICONDUCTOR ELEMENT TO SOLIDIFY SAID MELTED GLASS AND THUS ENCAPSULATE SAID SEMICONDUCTOR ELEMENT IN A GLASS ENVELOPE, AND (D) CUTTING SAID INWARDLY PROJECTING EXTENSIONS FREE OF SAID PIECE OF CONDUCTIVE MATERIAL TO FORM AN ENCAPSULATED SEMICONDUCTOR DEVICE, WHEREIN SAID EXTENSIONS PROTRUDE OUTWARDLY FROM SAID GLASS ENVELOPE AND SERVE AS SAID LEAD ELEMENTS FOR SAID DEVICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-08 | 1970-02-07 | 1970-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-08 | 1974-02-07 | 1974-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-08 | 1978-02-07 | 1978-08-09 | $7700.00 | Window Closed / Lapsed |