Unitary semiconductor device providing functions of a plurality of transistors

Claim 1

A SEMICONDUCTOR POWER AMPLIFIER COMPRISING: A SUBSTRATE OF SEMICONDUCTIVE MATERIAL OF A FIRST TYPE OF SEMICONDUCTIVITY AND HAVING OPPOSED MAJOR SURFACES; AT LEAST TWO ELECTRODES IN RECTIFYING CONTACT WITH THE FIRST OF SAID MAJOR SURFACES; AT LEAST TWO ELECTRODES IN OHMIC CONTACT WITH SAID FIRST MANOR SURFACE; AT LEAST ONE ELECTRODE IN RECTIFYING CONTACT WITH THE SECOND OF SAID MANOR SURFACES; SAID ELECTRODES IN RECTIFYING CONTACT WITH SAID FIRST MAJOR SURFACE BEING OPPOSITELY DISPOSED FROM SAID AT LEAST ONE ELECTRODE IN RECTIFYING CONTACT WITH SAID SECOND MAJOR SURFACE; SAID ELECTRODES ON SAID FIRST MAJOR SURFACE HAVING AN ELONGATED CONFIGURATION AND DISPOSED IN A PATTERN COMPRISING A FIRST RECTIFYING CONTACT AND A FIRST OHMIC CONTACT IN AN ELECTRICALLY INTERACTING RELATIONSHIP AND A SECOND RECTIFYING CONTACT AND A SECOND OHMIC CONTACT IN AN ELECTRICALLY INTERACTING RELATIONSHIP; SAID FIRST RECTIFYING CONTACT AND SAID FIRST OHMIC CONTACT BEING SYMMETRICAL WITH SAID SECOND RECTIFYING CONTACT AND SAID SECOND OHMIC CONTACT ABOUT A LINE SUBSTANTIALLY THROUGH THE CENTER OF SAID FIRST MAJOR SURFACE; SAID SUBSTRATE HAVING AN ISOLATING BARRIER EXTENDING ALONG SAID LINE IN SAID FIRST MAJOR SURFACE TO PROVIDE A STRUCTURE CAPABLE OF OP-