Heterojunction surface channel transistors

Claim 1

A HETEROJUNCTION SURFACE CHANNEL DEVICE COMPRISING A MONOCRYSTALLINE SEMICONDUCTOR BODY CONSTITUTED OF A FIRST SEMICONDUCTOR MATERIAL HAVING A FIRST BAND GAP AND BEING OF PREDETERMINED CONDUCTIVITY TYPE, TWO SPACED REGIONS OF OPPOSITE CONDUCTIVIY-TYPE ON ONE SURFACE OF SAID SEMICONDUCTOR BODY, A THIRD MONOCRYSTALLINE REGION OF A SECOND DIFFERENT SEMICONDUCTOR MATERIAL HAVING A SECOND WIDER BAND GAP AND BEING OF OPPOSITE CONDUCTIVITY TYPE ON SAID ONE SURFACE INTERMEDIATE SAID TWO SPACED REGIONS AND DEFINING WITH SAID BODY A HETEROJUNCTION WHEREBY AN INVERSION LAYER IS CREATED AT THE INTERFACE AND CONTACTING SAID TWO SPACED REGIONS TO DEFINE AN OHMIC CONDUCTION CHANNEL THEREBETWEEN, OHMIC CONTACTS TO SAID TWO SPACED REGIONS AND TO SAID THIRD REGION, MEANS FOR APPLYING BIAS POTENTIALS TO EACH OF SAID OHMIC CONTACTS SO THAT A FLOW OF MAJORITY CARRIERS IS PRODUCED IN SAID CONDITION CHANNEL AND IS CONTROLLED BY SAID BIASING POTENTIALS APPLIED AT SAID THIRD REGION SERVING AS A GATE.