US3260901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semi-conductor device having selfprotection against overvoltage
Assignee: Alcatel Lucent SAS
•
Filing: 1962-03-08
•
Granted: 1966-07-12
•
Expires: 1982-03-08
Abstract
No abstract record available.
Inventors
- 👤 Luescher Jakob
- 👤 Zega Bogdan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:47
CPC Classifications
H; H02; H02H; H02H9/00; H02H9/04; H02H9/044; H02H7/00; H02H7/20; H02H7/205; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
A SEMICONDUCTOR DEVICE HAVING SELF-PROTECTION AGAINST OVER-VOLTAGE, COMPRISING FOUR LAYERS OF MONOCRYSTALLINE MATERIAL OF ALTERNATELY OPPOSITE CONDUCTIVITY TYPE FORMING TWO OUTER P-N JUNCTIONS AND AN INNER P-N JUNCTION, THE OUTER TWO OF SAID LAYERS BEING DEGENERATE LAYERS AND THE OUTER TWO JUNCTIONS BEING RELATIVELY THIN JUNTIONS, ONE OF THE INNER TWO OF SAID LAYERS HAVING A RELATIVELY WEAK CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION ADJACENT TO SAID INNER JUNCTION AND HAVING AN INCREASED CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION AT LEAST APPROACHING DEGENERACY ADJACENT TO ONE OF SAID OUTER JUNCTIONS, AND THE OTHER OF SAID INNER LAYERS HAVING A CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION OF A LOWER VALUE THAN DEGENERACY ADJACENT TO SAID INNER JUNCTION AND INCREASING AT LEAST TO APPROACH DEGENERACY ADJACENT TO THE OTHER OF SAID OUTER JUNCTIONS.
Claim 2
Dependent Claim
128 words
A SEMICONDUCTOR DEVICE HAVING SELF-PROTECTION AGAINST OVER-VOLTAGE, COMPRISING FOUR LAYERS OF MONOCRYSTALLINE MATERIAL OF ALTERNATELY OPPOSITE CONDUCTIVITY TYPE FORMING TWO OUTER P-N JUNCTIONS AND AN INNER P-N JUNCTION, THE OUTER TWO OF SAID LAYERS BEING DEGENERATE LAYERS AND THE OUTER TWO JUNCTIONS BEING RELATIVELY THIN JUNTIONS, ONE OF THE INNER TWO OF SAID LAYERS HAVING A RELATIVELY WEAK CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION ADJACENT TO SAID INNER JUNCTION AND HAVING AN INCREASED CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION AT LEAST APPROACHING DEGENERACY ADJACENT TO ONE OF SAID OUTER JUNCTIONS, AND THE OTHER OF SAID INNER LAYERS HAVING A CONDUCTIVITY TYPE DETERMINING IMPURITY CONCENTRATION OF A LOWER VALUE THAN DEGENERACY ADJACENT TO SAID INNER JUNCTION AND INCREASING AT LEAST TO APPROACH DEGENERACY ADJACENT TO THE OTHER OF SAID OUTER JUNCTIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-07-11 | 1970-01-10 | 1970-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-07-11 | 1974-01-10 | 1974-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-07-11 | 1978-01-10 | 1978-07-12 | $7700.00 | Window Closed / Lapsed |