Transistors and the fabrication thereof

Claim 1

A GERMANIUM P-N-P TRANSISTOR COMPRISING: A BODY OF GERMANIUM HAVING A P-TYPE COLLECTOR REGION, AN N-TYPE DIFFUSED INTERNAL BASE LAYER NEAR ONE FACE OF THE BODY PENETRATING INTO SAID COLLECTOR REGION, AN N-TYPE SURFACE LAYER ADJACENT SAID ONE FACE OF THE BODY CONTACTING AND EXTENDING FROM SAID INTERNAL BASE LAYER TO PROVIDE A BASE CONTACT AREA, A P-TYPE EMITTER REGION SUPERIMPOSED ON SAID INTERNAL BASE LAYER AND COMPOSED OF GERMANIUM DOPED WITH A PREPONDERANCE OF SLOW-DIFFUSING P-TYPE IMPURITY AND A MINOR AMOUNT OF FAST DIFFUSING N-TYPE IMPURITY, THE EMITTER REGION INCLUDING A REGROWTH AREA OF GERMANIUM DOPED WITH A RELATIVELY LARGE AMOUNT OF ALUMINUM, AN EMITTER ELECTRODE OVERLYING AND IN SURFACE CONTACT WITH SAID EMITTER REGION AND COMPRISING ALUMINUM AS A MAJOR CONSTITUENT ALONG WITH SAID N-TYPE AND PTYPE IMPURITY, A BASE CONTACT COMPRISING AN ALLOY OF A CARRIER METAL AND N-TYPE IMPURITY ON SAID BASE CONTACT AREA AT A POSITION SPACED FROM SAID EMITTER ELECTRODE.